TITLE

Oxides grown on textured single-crystal silicon for enhanced conduction

AUTHOR(S)
Fong, Y.; Wu, A. T.; Ko, P. K.; Hu, C.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/4/1988, Vol. 52 Issue 14, p1139
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electrical properties and integrity of oxides grown on textured single-crystal silicon (TSC oxides) are investigated and are compared to oxides grown on untextured single-crystal silicon (normal oxides) and oxides grown on polycrystalline silicon (polyoxides). The 230 Ã… TSC oxide exhibited enhanced electron injection in both polarities, reducing the voltage necessary for JG=+1 mA/cm2 from 21 V for normal 230 Ã… oxides to 5 V. This made the 230 Ã… TSC oxide approximately equivalent to a 60 Ã… normal oxide. The electron trapping rate for the TSC oxide was similar to that of 230 Ã… normal oxides but is much smaller than that of polyoxides. Charge-to-breakdown (QBD) measurements showed a much better QBD histogram (large area capacitors) for the TSC oxide than for 230 Ã… and 60 Ã… normal oxides.
ACCESSION #
9826435

 

Related Articles

  • Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix. Kan, E.W.H.; Choi, W.K.; Leoy, C.C.; Chim, W.K.; Antoniadis, D.A.; Fitzgerald, E.A. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p2058 

    A double-step annealing profile has been used to synthesize germanium nanodots embedded in silicon oxide matrix with low defects, good crystallinity, good size distribution, and shape. A significant reduction in the photoluminescence was observed for samples annealed at temperature higher than...

  • Growth characteristics of oxide precipitates in heavily doped silicon crystals. Matsumoto, Satoru; Ishihara, Ichiro; Kaneko, Hiroyuki; Harada, Hirofumi; Abe, Takao // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p957 

    The doping concentration dependence on the growth of oxide precipitates has been studied using transmission electron microscopy in phosphorus and boron-doped silicon crystals. Samples were annealed at 800 and 850 °C for 24–384 h in dry nitrogen. In phosphorus-doped silicon, the...

  • Comparison of excimer laser recrystallized prepatterned and unpatterned silicon films on SiO2. Giust, G.K.; Sigmon, T.W. // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1204 

    Compares the laser recrystallization of unpatterned and prepatterned silicon films on silicon oxide. Recrystallized grain microstructures; Recrystallization mechanisms; Creation and identification of three well defined zones in the prepatterned films.

  • Interface States and Capacitance—Voltage Characteristics of n-SnO[sub 2]:Ni/p-Si Heterostructures under Gas-Adsorption Conditions. Vasil’ev, R. B.; Gas’kov, A. M.; Rumyantseva, M. N.; Ryabova, L. I.; Akimov, B. A. // Semiconductors;Apr2001, Vol. 35 Issue 4, p424 

    The n-SnO[sub 2]:Ni/p-Si heterostructures were synthesized with a mean size of 6-8 nm of crystallites in the tin dioxide layer. The capacitance-voltage characteristics of these structures were measured in dry air and under adsorption of NO[sub 2] and C[sub 2]H[sub 5]OH molecules. The variation...

  • The model of solid phase crystallization of amorphous silicon under elastic stress. Kimura, Yasuo; Kishi, Masato // Journal of Applied Physics;4/15/2000, Vol. 87 Issue 8, p4017 

    Presents information on a study which examined the model of solid phase crystallization of amorphous silicon film under elastic stress. Methodology of the study; Result and discussion on the study; Conclusion.

  • Design of a nanoscale silicon laser. Jaiswal, S.L.; Simpson, J.T.; Withrow, S.P.; White, C.W.; Norris, P.M. // Applied Physics A: Materials Science & Processing;2003, Vol. 77 Issue 1, p57 

    The recent observation of optical gain from silicon nanocrystals embedded in SiO[sub 2] opens an opportunity to develop a nanoscale silicon-based laser. However, the challenge remains to design and develop a laser architecture using CMOScompatible materials. In this paper we present two designs...

  • Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals. Kissinger, G.; Morgenstern, G.; Vanhellemont, J.; Gra¨f, D.; Lambert, U.; Richter, H. // Applied Physics Letters;1/12/1998, Vol. 72 Issue 2 

    Fast pulled Czochralski silicon crystals usually contain large octahedral vacancy agglomerates. These voids are known as D defects, which degrade the integrity of thin gate oxides by causing time zero dielectric breakdown. After annealing the wafers at temperatures above 1100 °C, the gate...

  • Enhanced nucleation of oxide precipitates during Czochralski silicon crystal growth with nitrogen doping. Aihara, K.; Takeno, H.; Hayamizu, Y.; Masui, T.; Tamatsuka, M. // Journal of Applied Physics;9/15/2000, Vol. 88 Issue 6, p3705 

    Investigates the thermal stability of oxide precipitate nuclei for Czochralski silicon crystals with nitrogen doping. Enhancement of the generation of the grown-in oxide precipitate nuclei stable by nitrogen doping; Doped nitrogen's lack of influence on further oxide precipitate nucleation...

  • Electrical characteristics of oxynitrides grown on textured single-crystal silicon. Ming-yin Hao; Lee, Jack C. // Applied Physics Letters;1/27/1992, Vol. 60 Issue 4, p445 

    Examines the electrical characteristics of oxynitrides grown on textured single-crystal silicon. Comparison with the interface state generation and breakdown characteristics of oxides and oxynitrides grown on untextured silicon; Importance of textured oxynitrides for electrical-erasable...

  • Low-defect colorless Bi[sub 12]SiO[sub 20] grown by hydrothermal techniques. Harris, Meckie T.; Larkin, John J. // Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2162 

    Investigates the growth of bismuth silicon oxide (BSO) crystals using the pressure-balanced hydrothermal technique. Absence of the deep-donor absorption shoulder in the undoped crystals; Use of BSO for optical signal processing; Factors attributed to the photochromic response and TSC signals in...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics