Oxides grown on textured single-crystal silicon for enhanced conduction

Fong, Y.; Wu, A. T.; Ko, P. K.; Hu, C.
April 1988
Applied Physics Letters;4/4/1988, Vol. 52 Issue 14, p1139
Academic Journal
The electrical properties and integrity of oxides grown on textured single-crystal silicon (TSC oxides) are investigated and are compared to oxides grown on untextured single-crystal silicon (normal oxides) and oxides grown on polycrystalline silicon (polyoxides). The 230 Ã… TSC oxide exhibited enhanced electron injection in both polarities, reducing the voltage necessary for JG=+1 mA/cm2 from 21 V for normal 230 Ã… oxides to 5 V. This made the 230 Ã… TSC oxide approximately equivalent to a 60 Ã… normal oxide. The electron trapping rate for the TSC oxide was similar to that of 230 Ã… normal oxides but is much smaller than that of polyoxides. Charge-to-breakdown (QBD) measurements showed a much better QBD histogram (large area capacitors) for the TSC oxide than for 230 Ã… and 60 Ã… normal oxides.


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