TITLE

Photoluminescence broadening mechanisms in high quality GaInAs-AlInAs quantum well structures

AUTHOR(S)
Brown, A. S.; Henige, J. A.; Delaney, M. J.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/4/1988, Vol. 52 Issue 14, p1142
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaInAs-AlInAs quantum well structures have been analyzed by low-temperature photoluminescence. The photoluminescence linewidth (full width at half-maximum) of thicker quantum wells (>10 nm) grown directly on AlInAs buffer layers shows that an inverse relationship exists between interface quality and AlInAs alloy quality in agreement with the theoretical analysis of J. Singh, S. Dudley, B. Davies, and K. K. Bajaj [J. Appl. Phys. 60, 3167 (1986)]. Thinner wells show much improved luminescence properties due to a growth of previous wells.
ACCESSION #
9826433

 

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