TITLE

Preparation and characterization of some AIBIICV type semiconductors

AUTHOR(S)
Bacewicz, R.; Ciszek, T. F.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/4/1988, Vol. 52 Issue 14, p1150
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Crystals of LiZnP, LiCdP, and LiZnAs are prepared by direct fusion of constituent elements. All three materials are found to be p-type semiconductors. Absorption edge and photoconductivity spectra are measured. Band gaps are estimated to be 1.25 eV for LiZnAs, 1.3 eV for LiCdP, and 2.1 eV for LiZnP.
ACCESSION #
9826429

 

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