Characterization of Mn-doped InAsxP1-x grown by organometallic vapor phase epitaxy

Huang, K.; Wessels, B. W.
April 1988
Applied Physics Letters;4/4/1988, Vol. 52 Issue 14, p1155
Academic Journal
Epitaxial layers of InAsxP1-x:Mn are grown by organometallic vapor phase epitaxy on (100) oriented InP substrates. The InAsxP1-x layers are deliberately doped with Mn from the vapor phase. Photoluminescent properties are studied as a function of alloy composition for x=0–0.52. Experimental data indicate that the manganese acceptor level is pinned to the vacuum level for the range of alloy compositions studied.


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