TITLE

Characterization of Mn-doped InAsxP1-x grown by organometallic vapor phase epitaxy

AUTHOR(S)
Huang, K.; Wessels, B. W.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/4/1988, Vol. 52 Issue 14, p1155
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial layers of InAsxP1-x:Mn are grown by organometallic vapor phase epitaxy on (100) oriented InP substrates. The InAsxP1-x layers are deliberately doped with Mn from the vapor phase. Photoluminescent properties are studied as a function of alloy composition for x=0–0.52. Experimental data indicate that the manganese acceptor level is pinned to the vacuum level for the range of alloy compositions studied.
ACCESSION #
9826424

 

Related Articles

  • High-quality InAlAs grown by organometallic vapor phase epitaxy. Aina, Leye; Mattingly, Mike // Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1637 

    High-quality InAlAs with excellent photoluminescence and low electron concentrations has been grown by organometallic vapor phase epitaxy (OMVPE). For InAlAs lattice matched to InP, electron concentrations as low as 7×1015 cm-3 and mobilities as high as 4472 cm2/V s at 300 K have been...

  • Electronic and optical properties of deep levels in iron-doped InAsP alloys. Huang, K.; Wessels, B. W. // Journal of Applied Physics;12/15/1988, Vol. 64 Issue 12, p6770 

    Presents information on a study which investigated the electronic and optical properties of deep levels in iron-doped indium alloys by organometallic vapor phase epitaxy. Description of the 3-d transition metal dopants in III-V semiconductors; Methodology of the study; Results and discussion.

  • Low-temperature photoluminescence of epitaxial InAs. Lacroix, Y.; Tran, C. A.; Watkins, S. P.; Thewalt, M. L. W. // Journal of Applied Physics;12/1/1996, Vol. 80 Issue 11, p6416 

    Examines the low-temperature photoluminescence of epitaxial indium arsenide (InAs) grown by metal-organic chemical-vapor deposition (MOCVD). Description of the MOCVD growth of InAs on InAS substrates; Discussion on the InAs spectrum; Mechanisms of broadband luminescence.

  • DIRECT GROWTH OF HIGH-QUALITY InP LAYERS ON GaAs SUBSTRATES BY MOCVD. Yarn, K.F.; Chien, W.C.; Lin, C.L.; Liao, C.I. // Active & Passive Electronic Components;Jun2003, Vol. 26 Issue 2, p71 

    In this report, we have overcome the drawback of surface roughness of metamorphic buffer layer by LP-MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented GaAs (1 0 0) substrates with 10 degree towards (1 1 1)A. The grown films...

  • InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy. Schneider, R. P.; Wessels, B. W. // Applied Physics Letters;11/5/1990, Vol. 57 Issue 19, p1998 

    Strained InAs/InP single quantum wells of nominal thickness 1–11 monolayers have been prepared using organometallic vapor phase epitaxy in an atmospheric pressure reactor. For wells of thickness 1–3 ML grown using optimal flow modulation parameters, the surface morphology was...

  • Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN. Schenk, H. P. D.; Nemoz, M.; Korytov, M.; Vennéguès, P.; Dräger, A. D.; Hangleiter, A. // Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p081116 

    Al1-xInxN ternary alloys with solid phase indium compositions between x=0.15 and 0.28 have been grown by metal organic chemical vapor deposition under indium rich conditions within the growth temperature range of 750–810 °C. A thermally activated process with activation energy of...

  • X-ray diffraction from ordered regions in GaInP ternary alloys. Okuda, Hiroshi; Anayama, Chikashi; Narita, Satoyasu; Kondo, Makoto; Tanahashi, Toshiyuki; Ueda, Osamu; Nakajima, Kazuo // Applied Physics Letters;8/14/1989, Vol. 55 Issue 7, p690 

    Ordered structure in GaInP alloys grown on (001) GaAs substrates by low-pressure metalorganic vapor phase epitaxy has been investigated by means of x-ray diffraction and transmission electron microscopy. We found a broad peak of CuPt I type (111)B ordering in the x-ray measurements. X-ray...

  • X-ray investigation of the ordered structure in AlGaInP quaternary alloys. Okuda, Hiroshi; Anayama, Chikashi; Tanahashi, Toshiyuki; Nakajima, Kazuo // Applied Physics Letters;11/20/1989, Vol. 55 Issue 21, p2190 

    The ordered structure occurring in AlGaInP quaternary alloys grown on GaAs substrates by low-pressure metalorganic vapor phase epitaxy has been investigated by means of x-ray diffraction measurements. The order spot became strong as the Al content increased, and was observed only for the (1/2...

  • Strain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvature. Ma, ShaoJun; Sodabanlu, Hassanet; Watanabe, Kentaroh; Sugiyama, Masakazu; Nakano, Yoshiaki // Journal of Applied Physics;Dec2011, Vol. 110 Issue 11, p113501 

    Precise strain compensation for lattice-mismatched quantum wells is crucial for obtaining high performance devices such as quantum well solar cells. High-accuracy in situ curvature monitoring is a more efficient tool to adjust growth conditions for perfect strain balancing, and we have achieved...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics