Damage assessment in low-dose Si-implanted GaAs by Raman spectroscopy

Wagner, Joachim
April 1988
Applied Physics Letters;4/4/1988, Vol. 52 Issue 14, p1158
Academic Journal
Allowed and forbidden first-order as well as resonant second-order Raman scattering has been used to study implantation damage in low-dose (5×1011–1×1013 cm-2) 29Si+-implanted GaAs. Symmetry forbidden scattering by longitudinal optical (LO) phonons and allowed 2LO scattering were found to be most sensitive to lattice damage for the range of implantation doses given above. The intensity ratio of the 2LO peak to the forbidden LO phonon line measures variations in the implantation dose with an accuracy better than ±7% for an average dose of 2×1012 cm-2. The potential of spatially resolved Raman spectroscopy for the assessment of homogeneity in as-implanted GaAs wafers has been demonstrated.


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