TITLE

Monte Carlo study of electron heating and enhanced thermionic emission by hot phonons in heterolayers

AUTHOR(S)
Kim, Kiwook; Hess, Karl; Capasso, Federico
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/4/1988, Vol. 52 Issue 14, p1167
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a numerical study of the effects of nonthermal phonon distributions on electron transport across heterolayers. For the microscopic analysis of both the electron and phonon dynamics, an ensemble Monte Carlo method has been used which includes a realistic band structure. It is observed that the abrupt energy gain at the heterointerface generates significant perturbations in the phonon distribution through the subsequent relaxation and heats the electron distribution because of the reabsorption of nonequilibrium phonons. The influence of a wide range of operating conditions on hot-phonon effects is also discussed.
ACCESSION #
9826419

 

Related Articles

  • Hot-phonon effects on electron transport in quantum wires. Mickevicˇius, R.; Mitin, V.; Paulavicˇius, G.; Kochelap, V.; Stroscio, M. A.; Iafrate, G. J. // Journal of Applied Physics;11/1/1996, Vol. 80 Issue 9, p5145 

    Deals with a study which investigated hot phonon effects on electron transport in rectangular gallium arsenide/aluminum arsenide quantum wires by a self-consistent Monte Carlo simulation. Model and method; Analysis of hot phonons in a single quantum wire; Summary and findings.

  • Full-band Monte Carlo model of electron and hole transport in strained Si including inelastic... Fischer, Bjorn; Hofmann, Karl R. // Applied Physics Letters;4/12/1999, Vol. 74 Issue 15, p2185 

    Features full-band Monte Carlo simulations of electron and hole transport in strained silicon including inelastic acoustic phonon scattering. In-plane lattice mobilities for electrons and for holes; Drift velocity and energy versus electric field characteristics given as reference for...

  • Monte Carlo Simulation of Electron Transport in AlGaAS. El-Ela, F. M. Abou // AIP Conference Proceedings;2005, Vol. 748 Issue 1, p86 

    This paper studies the high electric field transport in the ternary alloy AlxGa1-xAs for composition x range from 0.0 to 0.35. Our calculations are based on a Monte Carlo technique for the three-valley conduction band model. Scattering sources include polar optical phonons, intervalley phonons,...

  • Electron transport and full-band electron-phonon interactions in graphene. Akturka, Akin; Goldsman, Neil // Journal of Applied Physics;Mar2008, Vol. 103 Issue 5, p053702 

    We developed a full-band Monte Carlo simulator to investigate electron transport in a single layer of graphite (graphene). The electron and phonon dispersion curves of graphene are first obtained by applying the tight-binding method to the two inequivalent atoms of the graphene unit cell,...

  • Effects of phonon confinement on electron transport in superlattices. Shigekawa, Naoteru; Mizutani, Takashi; Yokoyama, Kiyoyuki // Journal of Applied Physics;1/15/1989, Vol. 65 Issue 2, p677 

    Presents a study that evaluated the effect of phonon confinement within each layer of semiconductor superlattices on electron transport parallel to their interfaces at room temperature using Monte Carlo methods. Electron-phonon interaction in superlattices with very thin barrier layers; Values...

  • Nonequilibrium Phonon Propagation in High-Purity CdTe. Sharkov, A. I.; Galkina, T. I.; Klokov, A. Yu.; Klevkov, Yu. V. // Physics of the Solid State;Jan2003, Vol. 45 Issue 1, p163 

    Propagation of nonequilibrium acoustic phonons in samples of high-purity CdTe (impurity content ∼10[SUP16] cm[SUP-3]) was studied using the heat pulse technique under pulsed photoexcitation. An analysis of nonequilibrium phonon propagation made by comparing the experimental response with...

  • Monte Carlo calculation of electron transport properties of bulk AIN. Albrecht, J.D.; Wang, R.P.; Ruden, P. P.; Farahmand, M.; Brennan, K. F. // Journal of Applied Physics;2/1/1998, Vol. 83 Issue 3, p1446 

    Presents a study which focuses on the Monte Carlo method, used to calculate electron transport properties of bulk AIN. How the electron drift velocity for large electric fields are calculated; Results of this study; Discussion on the results.

  • Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure. Kolník, Ján; Oğuzman, İsmail H.; Brennan, Kevin F.; Wang, Rongping; Ruden, P. Paul; Wang, Yang // Journal of Applied Physics;7/15/1995, Vol. 78 Issue 2, p1033 

    Discusses a study which reported electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure. Manner in which the band structure throughout the Brillouin zone is determined; Advantages of the use of...

  • Monte Carlo simulation of electron transport in narrow gap heterostructures. Thobel, Jean-Luc; Bonno, Olivier; Dessenne, François; Boutry, Hervé // Journal of Applied Physics;11/1/2002, Vol. 92 Issue 9, p5286 

    A Monte Carlo method is proposed for the study of in-plane electron transport in narrow gap heterostructures. Special attention is paid to the consequences of the strong nonparabolicity of the conduction band. The electron states are calculated within the framework of envelope function theory,...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics