TITLE

Surface processes in CF4/O2 reactive etching of silicon

AUTHOR(S)
Oehrlein, Gottlieb S.; Robey, Steve W.; Lindström, J. Lennart
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/4/1988, Vol. 52 Issue 14, p1170
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Silicon surfaces etched in CF4/O2 plasma have been characterized with the use of in situ x-ray photoemisson spectroscopy. A SiFxOy layer on elemental silicon is formed under all conditions. For oxygen percentages greater than 5% in the feed gas, the oxygen content of the film and the film thickness increase, whereas the fluorine content of the film decreases. The Si etch rate decreases also and appears to be controlled primarily by the thickness of the SiFxOy layer, rather than by the F atom concentration in the gas phase, which increases up to 15% O2 addition.
ACCESSION #
9826417

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics