TITLE

High-rate growth at low temperatures by free-jet molecular flow: Surface-reaction film-formation technology

AUTHOR(S)
Ohmi, T.; Morita, M.; Kochi, T.; Kosugi, M.; Kumagai, H.; Itoh, M.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/4/1988, Vol. 52 Issue 14, p1173
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Surface-reaction film-formation technology of epitaxial Si and polcrystalline silicon using free-jet molecular flow is proposed. High-rate (∼0.5 μm/min or higher) growth of homoepitaxial Si films with high crystallographic perfection has been achieved at temperatures as low as 600 °C without the chemical by-product deposition on the inner surface of the reaction chamber. This result also implies that this system has the cleaning-free function. The film-formation mechanism appears to be dominated by the chemical reaction on the substrate surface without the vapor phase reaction.
ACCESSION #
9826414

 

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