TITLE

Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy

AUTHOR(S)
Choi, H. K.; Lee, J. W.; Salerno, J. P.; Connors, M. K.; Tsaur, B-Y.; Fan, J. C. C.
PUB. DATE
April 1988
SOURCE
Applied Physics Letters;4/4/1988, Vol. 52 Issue 14, p1114
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-threshold double-heterostructure ridge-waveguide lasers have been fabricated in GaAs/AlGaAs layers grown on Si by organometallic vapor phase epitaxy. The pulsed threshold current of the best ridge-waveguide laser is 50 mA, with differential quantum efficiency of about 9% per facet. Broad-area lasers fabricated on the same wafer have pulsed threshold current densities as low as 300 A/cm2 .
ACCESSION #
9826397

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics