Novel high voltage transistor fabricated using the in situ junctions in a Si-TaSi2 eutectic composite

Ditchek, B. M.; Middleton, T. R.; Rossoni, P. G.; Yacobi, B. G.
April 1988
Applied Physics Letters;4/4/1988, Vol. 52 Issue 14, p1147
Academic Journal
Transistor action has been observed for the first time in a Si-TaSi2 eutectic composite. These devices, utilizing the in situ cylindrical Schottky junctions between the Si matrix and the TaSi2 rod phase, have characteristics typical of a metal-semiconductor field-effect transistor (MESFET). However, unlike a conventional planar device like a MESFET, eutectic transistors are resistant to avalanche breakdown. A device is demonstrated that blocks 600 V, a value that is three times larger than would be expected for a planar device of the same carrier concentration.


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