Electron beam oxidation of semiconductors (one mechanism of electron beam processes)

Wada, Takao
March 1988
Applied Physics Letters;3/28/1988, Vol. 52 Issue 13, p1056
Academic Journal
New types of oxide layers of Si and GaAs were grown on (100) Si and (100) GaAs substrate by using an electron beam doping technique at 40–50 °C. The surfaces of the semiconductors were irradiated with a fluence of ∼5×1017 electrons cm-2 at 7 MeV. The samples were put in an isothermal circulating water bath with a thermoregulator. The electronic structure of the oxide layers was observed by an x-ray photoelectron spectroscopy (XPS). The chemical shifts between oxidized and nonoxidized Ga signals for Auger electron spectra and 3d XPS spectra were nearly equal to that in the conventional plasma-grown oxidation. It was suggested that the electron beam doping, oxidation, and epitaxy were caused by plasma reaction.


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