TITLE

Evidence of a photon effect during the visible laser-assisted deposition of polycrystalline silicon from silane

AUTHOR(S)
Auvert, G.; Tonneau, D.; Pauleau, Y.
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/28/1988, Vol. 52 Issue 13, p1062
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Silicon dots have been produced by the decomposition of silane on Si layers deposited on quartz plates and irradiated by a cw Ar+ laser beam. The vertical deposition rate of Si dots was investigated as a function of irradiation time, output laser power, and silane pressure. The Si layer on quartz was first irradiated with the laser beam penetrating through the transparent quartz plate (back irradiation). The deposition of Si dots occurred by pyrolytic decomposition of ‘‘cold’’ silane molecules impinging on the laser heated area. When the surface of the Si layer on quartz was directly irradiated with the visible laser beam (front irradiation), the deposition of Si dots was accomplished at lower temperatures and involved an interaction of photons with reactive species. The kinetics of this photon-aided process is surface controlled and characterized by an apparent activation energy of about 38 kcal mol-1.
ACCESSION #
9826362

 

Related Articles

  • Possible contribution of SiH2 and SiH3 in the plasma-induced deposition of amorphous silicon from silane. Veprˇek, Stan; Veprˇek-Heijman, Maritza G. J. // Applied Physics Letters;4/30/1990, Vol. 56 Issue 18, p1766 

    A self-consistent quantitative analysis of recent kinetic data on the role of di- and trisilane in the plasma-induced deposition of amorphous silicon from monosilane confirms the conclusion that the dominant reactive intermediate responsible for the formation of di- and trisilane and,...

  • New device to generate Si2H6 for amorphous silicon depositions. Dickson, C. R. // Applied Physics Letters;10/20/1986, Vol. 49 Issue 16, p1022 

    A new device is described for continuous conversion of pure silane into disilane in yields up to 40%. The device was used in line with an amorphous silicon deposition system to grow 1-μm-thick films at 300 °C. The minority-carrier diffusion length measured on one of these films was 0.3...

  • Germania/ormosil hybrid materials derived at low temperature for photonic applications. Que, W.X.; Hu, X.; Zhang, Q.Y. // Applied Physics B: Lasers & Optics;2003, Vol. 76 Issue 4, p423 

    We report on germania/organically modified silane (ormosil) hybrid materials produced by the sol–gel technique for photonic applications. Acid-catalyzed solutions of γ-glycidoxypropyltrimethoxysilane mixed with germanium isopropoxide have been used as precursors for the hybrid...

  • Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment. Murota, Junichi; Nakamura, Naoto; Kato, Manabu; Mikoshiba, Nobuo; Ohmi, Tadahiro // Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p1007 

    An ultraclean hot-wall low-pressure chemical vapor deposition (CVD) system was developed and Si films were deposited on single-crystal Si and SiO2 using ultraclean SiH4 and H2 gases in the temperature range 600–850 °C under an ultraclean environment. As a result of ultraclean...

  • Laser direct writing of micron-size silicon lines from trisilane. Boughaba, S.; Auvert, G. // Journal of Applied Physics;12/1/1995, Vol. 78 Issue 11, p6791 

    Studies laser direct writing of micron-size silicon lines from trisilane. Method of the study; Results and discussion; Conclusion.

  • Effect of argon dilution on the structure of microcrystalline silicon deposited from silane. Das, U. K.; Chaudhuri, P.; Kshirsagar, S. T. // Journal of Applied Physics;11/1/1996, Vol. 80 Issue 9, p5389 

    Focuses on a study which investigated the effect of argon dilution on the structure of microcrystalline silicon deposited from silane. Experimental procedures; Results; Conclusions.

  • The role of ion bombardment in the rf-glow-discharge preparation of intrinsic amorphous silicon. Cárabe, J.; Gandía, J. J.; Gutiérrez, M. T. // Journal of Applied Physics;5/1/1993, Vol. 73 Issue 9, p4618 

    Presents a study that investigated the influence of radio frequency power and the silane mass flow rate on the properties and growth rate of glow-discharge amorphous silicon. Experimental procedure; Results and discussion; Conclusions.

  • Mono- and disilicon radicals in silane and silane-argon dc discharges. Robertson, Robert; Gallagher, Alan // Journal of Applied Physics;5/15/1986, Vol. 59 Issue 10, p3402 

    Presents a study that examined the measurements of monosilicon and disilicon radicals at the cathode surface of direct current discharges in silane and silane-argon mixtures. Information on hydrogenated amorphous silicon films; Discussion on electron processes.

  • Light scattering diagnostics of silicon particle growth in CO[sub 2] laser-driven reactions. Botti, S.; Celeste, A. // Applied Physics A: Materials Science & Processing;1998, Vol. 67 Issue 4, p421 

    Abstract. In this work, we report an experimentally simple method for probing the silicon particle size evolution during the CO[sub 2] laser-induced pyrolysis of silane in a flow reactor, based on scattering of He-Ne laser light by a particulate in the reaction flame. The scattering and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics