Excitonic trapping from atomic layer epitaxial ZnTe within ZnSe/(Zn,Mn)Se heterostructures

Kolodziejski, L. A.; Gunshor, R. L.; Fu, Q.; Lee, D.; Nurmikko, A. V.; Gonsalves, J. M.; Otsuka, N.
March 1988
Applied Physics Letters;3/28/1988, Vol. 52 Issue 13, p1080
Academic Journal
ZnSe-based structures have been fabricated, consisting of monolayers of ZnTe grown by atomic layer epitaxy spaced by appropriate dimensions to approximate a Zn(Se,Te) mixed crystal; this method has been used to overcome the difficulties encountered in the molecular beam epitaxy (MBE) of the alloy with a low Te concentration. Reported work has shown that blue-blue/green luminescence, originating from exciton self-trapping at Te sites in Zn(Se,Te) bulk crystal alloys, is significantly more intense than the light emitted from ZnSe. Luminescence originating from ZnTe-containing ZnSe/ZnTe superlattice and ZnSe/(Zn,Mn)Se multiple quantum well structures was used to illustrate how the presence of ZnTe acts to trap excitons. Optical signatures of the MBE-grown structures were similar to those of the random alloy, indicating that the exciton self-trapping mechanism is important to the interpretation of recombination processes in structures containing ZnSe/ZnTe heterointerfaces.


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