TITLE

Photorefractive imaging of semiconductor wafers

AUTHOR(S)
Bylsma, R. B.; Olson, D. H.; Glass, A. M.
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/28/1988, Vol. 52 Issue 13, p1083
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Making use of the photorefractive effect, we have developed a versatile method of imaging various crystal properties of semi-insulating compound semiconductors. The magnitude and time evolution of refractive index gratings are monitored via diffraction. The observed diffraction is directly related to the electric fields present, and quantitative information concerning the spatial variation of dark conductivity, photoconductivity, and deep level absorption can be extracted. Wafers of undoped GaAs and InP:Fe have been characterized in this manner, and comparisons of images are made which demonstrate the capabilities of this technique.
ACCESSION #
9826355

 

Related Articles

  • Influence of post-treatment conditions on photoreactive effect of Zn:Fe:LiNbO3 crystals. Shuang-Quan Fang; De-cai Ma; Biao Wang; Fu-Ri Ling; Wang, G. // Microwave & Optical Technology Letters;May2006, Vol. 48 Issue 5, p986 

    Three kinds of different Zn:Fe:LiNbO3 wafers are prepared by proper reduction or oxidation post-treatment processes. The optical-damage-resistance abilities and photorefractive properties are studied using the optical compensator technique and two-wave coupling measurement, respectively. The...

  • Vary PRK algorithms by the patient's age. Sabbagh, Leslie // Ophthalmology Times;12/18/95, Vol. 20 Issue 48, p8 

    Recommends that surgeons should not use the same photorefractive keratectomy (PRK) algorithm on every patient. Cautions against overcorrection in patients older than 40 years.

  • CORRECTIONS TO "EFFECTS OF MULTI-PUMP BEAM COUPLING ON INTENSITY ENHANCEMENT OF A PROBE BEAM IN PHOTOREFRACTIVE TWO-WAVE MIXING" Gilbreath, G. C.; Davidson, F. M. // Microwave & Optical Technology Letters;Dec90, Vol. 3 Issue 12, p445 

    Presents a correction to the article "Effects of Multi-Pump Beam Coupling on Intensity Enhancement of a Probe Beam in Photorefractive Two-Wave Mixing," by G. C. Gilbreath and F. M. Davidson, published in the journal "Microwave and Optical Technology Letters."

  • Erratum: Photorefractive properties of double-doped HF:CE:LINBO3 crystals. Wei Zhou; Biao Wang; Wei Yuan; Furi Ling; Decai Ma; Yiran Ne // Microwave & Optical Technology Letters;Sep2008, Vol. 50 Issue 9, p2481 

    Originally published Microwave Opt Technol Lett 50: 1693–1695, 2008. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2481, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23626

  • Marangoni wafer drying avoids disadvantages. Wolke, Klaus; Eitel, Barbel // Solid State Technology;Aug96, Vol. 39 Issue 8, p87 

    Explains the basic principle and process sequence for Marangoni drying, a method for drying semiconductor wafers. Particle performance; Residue-fee drying; Absence of wafer stress; Low alcohol consumption; Applications of the drying technique to 300-mm wafers.

  • Asyst, INFAB propose rival 300-mm handling ideas. P.N.D. // Solid State Technology;Jul95, Vol. 38 Issue 7, p48 

    Features approaches to the handling of 300-mm wafers. Design of a wafer cassette from Asyst; Handling system from INFAB.

  • Emerging technologies alter fab chemical consumption. Castellano, Robert N. // Solid State Technology;Jul95, Vol. 38 Issue 7, p54 

    Reports on how emerging technologies have altered the chemical consumption of the semiconductor wafer industry. Gases; Wet chemicals; Reprocessing of chemicals; Photoresist category.

  • 300-mm wafers: Hurry up and wait? Haavind, Robert // Solid State Technology;Feb96, Vol. 39 Issue 2, p14 

    Editorial. Focuses on the plan in the semiconductor industry to produce 300 millimeter wafers. Plans of Motorola's Semiconductor Division; Possible source of funding for the wafers; Delays in the implementation of the plans; Importance of the wafers to microprocessor producers.

  • 300 mm: A new frontier. Fosnight, William; Martin, Raymond // Solid State Technology;Feb96, Vol. 39 Issue 2, p77 

    Looks at some of the strategic issues affecting wafer handling for the 300-millimeter (mm) generation. Lessons from the transition to 200-mm; International cooperation on the design of 300-mm; Attention on the standards for cassette carriers; Interrelated choices faced by semiconductor factory...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics