Growth of low-density two-dimensional electron system with very high mobility by molecular beam epitaxy

Shayegan, M.; Goldman, V. J.; Jiang, C.; Sajoto, T.; Santos, M.
March 1988
Applied Physics Letters;3/28/1988, Vol. 52 Issue 13, p1086
Academic Journal
We report on the growth of modulation-doped GaAs/Alx Ga1-xAs heterostructures with mobilities (μ) on the order of 1×106 cm2 /V s (at 4.2 K) and areal densities (ns ) below 8×1010 cm-2 . In growing these structures we employ the atomic plane doping technique and ultrathick (>1000 Å) spacer layers. The mobilities of these structures are the highest ever reported for low densities. Measurements of μ vs ns as a function of illumination or gate voltage indicate μ∼nαs behavior with α[bar_over_tilde:_approx._equal_to]0.6 and, even for ns [bar_over_tilde:_approx._equal_to]1.4×1010 cm-2 , μ has a value in excess of 0.3×106 cm2 /V s.


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