GexSi1-x strained-layer heterostructure bipolar transistors

Temkin, H.; Bean, J. C.; Antreasyan, A.; Leibenguth, R.
March 1988
Applied Physics Letters;3/28/1988, Vol. 52 Issue 13, p1089
Academic Journal
Double heterostructure bipolar transistors with the base region consisting of a p-Ge0.5Si0.5 strained-layer superlattice have been grown by molecular beam epitaxy. At a wavelength of 1.3 μm, optical gain as high as 52 has been achieved in two-terminal phototransistors. The large photocurrent is inferred to be a product of the transistor gain, on the order of 20, and avalanche multiplication. A differential current gain of 10 has been obtained in the three-terminal bipolar transistors. The incorporation of a narrow band-gap GexSi1-x superlattice base is expected to result in higher emitter injection efficiency as compared to Si bipolar transistors.


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