TITLE

Low-temperature epitaxial growth of silicon by low-pressure chemical vapor deposition

AUTHOR(S)
Meakin, D.; Stobbs, M.; Stoemenos, J.; Economou, N. A.
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/28/1988, Vol. 52 Issue 13, p1053
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-pressure chemical deposition of silicon by the pyrolysis of pure silane at relatively low temperatures and pressures below 100 mTorr can lead to structurally well-defined films. Below 10 mTorr the films exhibit evidence of local epitaxial growth, which can be particularly well defined on Si(100) wafers chemically treated prior to deposition outside the deposition chamber. Even so, the interface was found to be highly strained, and high-resolution electron microscopy observations were used to analyze the defect structures in the epitaxial layer as initiated at the interface.
ACCESSION #
9826333

 

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