Chemical vapor deposition of a silicon nitride layer with an excellent interface by NH3 plasma treatment

Shimoda, Sugirou; Shimizu, Isamu; Migitaka, Masatoshi
March 1988
Applied Physics Letters;3/28/1988, Vol. 52 Issue 13, p1068
Academic Journal
A new metal-insulator-semiconductor field-effect transistor (MISFET) fabrication technology has been developed by using a silicon nitride insulator. MISFET’s with high field-effect mobility were obtained by exposing a silicon surface to a NH3 plasma before silicon nitride (SiNx) deposition as a gate insulator in a rf plasma. An Auger spectrum showed possible nitridation of silicon by NH3 plasma treatment.


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