TITLE

Chemical vapor deposition of a silicon nitride layer with an excellent interface by NH3 plasma treatment

AUTHOR(S)
Shimoda, Sugirou; Shimizu, Isamu; Migitaka, Masatoshi
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/28/1988, Vol. 52 Issue 13, p1068
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new metal-insulator-semiconductor field-effect transistor (MISFET) fabrication technology has been developed by using a silicon nitride insulator. MISFET’s with high field-effect mobility were obtained by exposing a silicon surface to a NH3 plasma before silicon nitride (SiNx) deposition as a gate insulator in a rf plasma. An Auger spectrum showed possible nitridation of silicon by NH3 plasma treatment.
ACCESSION #
9826331

 

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