TITLE

Surface-superlattice effects in a grating-gate GaAs/GaAlAs modulation doped field-effect transistor

AUTHOR(S)
Ismail, K.; Chu, W.; Antoniadis, D. A.; Smith, Henry I.
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/28/1988, Vol. 52 Issue 13, p1071
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report transport phenomena exhibited by a two-dimensional electron gas at the interface of a modulation doped GaAs/GaAlAs heterostructure in the presence of a field-effect-controlled periodic potential modulation. By means of x-ray lithography and lift-off, a 0.2-μm-period Schottky barrier grating gate was fabricated in lieu of the common continuous gate in a field-effect transistor configuration. Conductance measurements at 4.2 K provide evidence of a superlattice effect.
ACCESSION #
9826327

 

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