Experimental and theoretical mobility of electrons in δ-doped GaAs

Gillman, G.; Vinter, B.; Barbier, E.; Tardella, A.
March 1988
Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p972
Academic Journal
We have prepared and measured the mobility of several samples of planar-doped GaAs. A maximum electron density of 2.7×1013 cm-2 has been obtained. Calculations of the mobility in a complete quasi-two-dimensional description are presented and compared with the measured results. Qualitatively, all features in the mobility are reproduced; the quantitative comparison may indicate that compensation effects play a role.


Related Articles

  • Stacking fault effects in pure and n-type doped GaAs. Schmidt, T. M.; Justo, J. F.; Fazzio, A. // Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p907 

    Using ab initio total-energy calculations, we investigate the effects of stacking faults on the properties of dopants in pure and n-type doped GaAs. We find that the Si impurity segregates towards a GaAs stacking fault. A Si atom at a Ga site in the stacking fault, in either a neutral or a...

  • Editorial. Min, Mart // Estonian Journal of Engineering;Mar2010, Vol. 16 Issue 1, p3 

    An introduction to the journal is presented in which the editor discusses a paper on the technologies for gallium arsenide (GaAs) powder diode structures, a description of high-level decision diagrams to represent digital electronic systems and articles on biomedical physics and technology.

  • Minority-carrier lifetime study of the pressure induced Γ-X crossover in GaAs. Leroux, M.; Pelous, G.; Raymond, F.; Verie, C. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p288 

    Room-temperature continuous and time-resolved (on a nanosecond scale) photoluminescence experiments have been performed on p-type GaAs. Observation of indirect luminescence in GaAs above 4 GPa allowed a direct determination of the room-temperature pressure coefficient of the X[sup c, sub 1]...

  • Electron velocity and negative differential mobility in AlGaAs/GaAs modulation-doped heterostructures. Masselink, W. T.; Braslau, N.; Wang, W. I.; Wright, S. L. // Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1533 

    We have measured the electron velocity in low-doped GaAs and in AlGaAs/GaAs modulation-doped heterostructures at electric fields up to 8000 V/cm at both 300 and 77 K. In order to avoid the charge domain formation which occurs in dc measurements at these fields, this measurement uses 35 GHz...

  • Assessment of the ionized EL2 fraction in semi-insulating GaAs. Blakemore, J. S.; Sargent, L.; Tang, R-S.; Swiggard, E. M. // Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2106 

    Both optical and electrical methods were used to provide separate evaluations of the fraction Pi of EL2 defect donors which have lost an electron. The semi-insulating GaAs which permitted these assessments had a large enough fraction of the EL2 compensated (by CAs acceptors) to make this a...

  • Hot-electron transport in selectively doped n-type AlGaAs/GaAs heterojunctions. Hirakawa, Kazuhiko; Sakaki, Hiroyuki // Journal of Applied Physics;2/1/1988, Vol. 63 Issue 3, p803 

    Focuses on a study that investigated the high-field transport of two-dimensional electrons in selectively doped aluminum gallium arsenide/gallium arsenide heterojunctions. Electric field dependence of mobility; Velocity-field characteristics; Conclusions.

  • Rapid communication Photoemission of spinpolarized electrons from strained GaAsP. Drescher, P.; Andresen, H. G.; Aulenbacher, K.; Bermuth, J.; Dombo, T.; Fischer, H.; Euteneuer, H.; Faleev, N. N.; Galaktionov, M. S.; von Harrach, D.; Hartmann, P.; Hoffmann, J.; Jennewein, P.; Kaiser, K. H.; K�bis, S.; Kovalenkov, O. V.; Kreidel, H. J.; Langbein, J.; Mamaev, Y. A.; Nachtigall, Ch. // Applied Physics A: Materials Science & Processing;1996, Vol. 63 Issue 2, p203 

    Strained layer GaAs[sub .95]P[sub .05] photo cathodes are presented, which emit electron beams spinpolarized to a degree of P = 75% typically. Quantum yields around QE = 0.4% are observed routinely. The figure of merit P� � QE = 2.3 � 10[sup -3] is comparable to that of the best...

  • Terahertz measurements of resonant planar antennas coupled to low-temperature-grown GaAs photomixers. McIntosh, K. A.; Brown, E. R.; Nichols, K. B.; McMahon, O. B.; DiNatale, W. F.; Lyszczarz, T. M. // Applied Physics Letters;12/9/1996, Vol. 69 Issue 24, p3632 

    Resonant slot and dipole antennas coupled to low-temperature-grown GaAs photomixers have been fabricated and tested at terahertz operating frequencies. Enhanced output power is seen from the resonant structures compared to mixers coupled to broadband self-complementary spiral antennas. Driving...

  • Monte Carlo simulation of high-field electron transport in GaAs using an analytical... Mouton, O.; Thobel, J.L.; Fauquembergue, R. // Journal of Applied Physics;4/1/1997, Vol. 81 Issue 7, p3160 

    Discusses the high energy field electron transport in gallium arsenide. Monte Carlo simulation; Band-structure model; Second conduction band model; Characteristics of gallium arsenide band structure; Post scattering state selection.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics