TITLE

Photocurrent enhancement in a GaAs metal-semiconductor-metal photodetector due to ultrasmall Au islands

AUTHOR(S)
Koscielniak, W. C.; Kolbas, R. M.; Littlejohn, M. A.; Licznerski, B. W.
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p987
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new GaAs metal-semiconductor-metal photodetector has been demonstrated which uses ultrasmall gold islands deposited on a lightly doped epitaxial layer. The fabricated devices showed an appreciable photocurrent enhancement with respect to conventional metal-semiconductor-metal devices at a bias of less than 4 V and soft breakdown characteristics above 4 V. Details of the fabrication procedure are presented, and some possible mechanisms to explain this enhancement are suggested.
ACCESSION #
9826296

 

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