Photocurrent enhancement in a GaAs metal-semiconductor-metal photodetector due to ultrasmall Au islands

Koscielniak, W. C.; Kolbas, R. M.; Littlejohn, M. A.; Licznerski, B. W.
March 1988
Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p987
Academic Journal
A new GaAs metal-semiconductor-metal photodetector has been demonstrated which uses ultrasmall gold islands deposited on a lightly doped epitaxial layer. The fabricated devices showed an appreciable photocurrent enhancement with respect to conventional metal-semiconductor-metal devices at a bias of less than 4 V and soft breakdown characteristics above 4 V. Details of the fabrication procedure are presented, and some possible mechanisms to explain this enhancement are suggested.


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