Mass-spectrometer-controlled fabrication of Si/Ge superlattices

van de Leur, R. H. M.; Schellingerhout, A. J. G.; Mooij, J. E.; Tuinstra, F.
March 1988
Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p1005
Academic Journal
We have used a quadrupole mass spectrometer to control deposition rates during fabrication of compositionally modulated Si/Ge superlattices. Its performance has been evaluated by an x-ray diffraction study of a superlattice. The variation of the Si deposition rate was less than 3% during the whole deposition time of 30 min. This proves that a mass spectrometer can be successfully employed as rate monitor in Si molecular beam epitaxy systems.


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