Proximity gettering with mega-electron-volt carbon and oxygen implantations

Wong, H.; Cheung, N. W; Chu, P. K.; Liu, J.; Mayer, J. W.
March 1988
Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p1023
Academic Journal
We have demonstrated that a buried gettering layer can be formed with a single MeV ion implantation without damaging the top device region. The strong gettering efficiency of carbon implant and its linear dependence on dose are confirmed. A surprising feature of the carbon implanted layers is that no extended defects are formed after annealing for implant doses up to 2×1016 cm-2 at 3 MeV, compared to a layer of small precipitates and dislocations in the case of oxygen implantation. It is suggested that the carbon-related gettering centers are point defects or their clusters.


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