Growth of RhGa on GaAs (001) in a molecular beam epitaxy system

Guivarc’h, A.; Secoué, M.; Guenais, B.
March 1988
Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p948
Academic Journal
Thin films of RhGa were grown on GaAs(001) in a molecular beam epitaxy system, by codeposition of rhodium and gallium from separated sources. The RhGa/GaAs contact is stable at least up to 550 °C and the film resistivity is low enough ( ρ[bar_over_tilde:_approx._equal_to]36 μΩ cm) to allow applications in microelectronics. In spite of high linear misfits, the as-deposited RhGa films exhibit the two following epitaxial arrangements related by a 90° rotation: [100](011)RhGa//[110](001)GaAs and [100](011)RhGa//[110](001)GaAs. After annealing at 550 °C, only one arrangement is observed.


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