Effects of hot sources on residual doping in GaAs grown by molecular beam epitaxy

Sacks, R. N.; Pastorello, R. A.
March 1988
Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p996
Academic Journal
A study of the effects of impurities evolving from a hot (1350–1500 °C) empty effusion cell on the residual doping concentrations in GaAs grown by molecular beam epitaxy (MBE) has been made. The influence of these impurities on electron concentrations in highly doped GaAs:Si has also been investigated. p-type residual doping was seen in all cases, with 1×1016/cm3 being the highest level observed. More typical were concentrations in the mid-to-high 1014 range after the empty cell had been properly degassed. While most of the acceptors appear to be C, there is some evidence that N may be involved at the higher concentrations. No effect from the hot source on the doping level of GaAs:Si with n=4×1018/cm3 was seen, showing that effusion cell evolved impurities are not responsible for limiting high electron concentrations in MBE-grown GaAs:Si.


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