TITLE

Effects of hot sources on residual doping in GaAs grown by molecular beam epitaxy

AUTHOR(S)
Sacks, R. N.; Pastorello, R. A.
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p996
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A study of the effects of impurities evolving from a hot (1350–1500 °C) empty effusion cell on the residual doping concentrations in GaAs grown by molecular beam epitaxy (MBE) has been made. The influence of these impurities on electron concentrations in highly doped GaAs:Si has also been investigated. p-type residual doping was seen in all cases, with 1×1016/cm3 being the highest level observed. More typical were concentrations in the mid-to-high 1014 range after the empty cell had been properly degassed. While most of the acceptors appear to be C, there is some evidence that N may be involved at the higher concentrations. No effect from the hot source on the doping level of GaAs:Si with n=4×1018/cm3 was seen, showing that effusion cell evolved impurities are not responsible for limiting high electron concentrations in MBE-grown GaAs:Si.
ACCESSION #
9826262

 

Related Articles

  • Closely spaced and separately contacted two-dimensional electron and hole gases by in situ focused-ion implantation. Pohlt, M.; Lynass, M.; Lok, J. G. S.; Dietsche, W.; Klitzing, K. v.; Eberl, K.; Mu¨hle, R. // Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2105 

    Separately contacted layers of a two-dimensional (2D) electron gas and a 2D hole gas have been prepared in GaAs, which are separated by AlGaAs barriers down to 15 nm thickness. The molecular-beam-epitaxial growth was interrupted just before growth of the double-layer structure in order to use in...

  • Effect of nitrogen and temperature on the electronic band structure of GaAs[sub 1-x]N[sub x] alloys. Chtourou, R.; Bousbih, F.; Bouzid, S. Ben; Charfi, F. F.; Harmand, J. C.; Ungaro, G.; Largeau, L. // Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2075 

    We have studied the band-gap reduction of GaAs[sub l-x]N[sub x] alloys with N contents between 0.1% and 1.5% using the absorption measurements in a series of samples grown by molecular-beam epitaxy. At room temperature, we observed a redshift of the band edge of about 205 meV for 1% of nitrogen....

  • Mass-action control of AlGaAs and GaAs growth in molecular beam epitaxy. Van Hove, J. M.; Cohen, P. I. // Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p726 

    GaAs evaporation during molecular beam epitaxy (MBE) is measured using reflection high-energy electron diffraction (RHEED). On the (001) surface there is a first-order phase transition from a 2 × 4 to 1 × 1 reconstruction. Upon crossing the phase boundary into the 1 × 1 structure,...

  • Control of orientation of CdTe grown on clean GaAs and the reconstruction of the precursor surfaces. Srinivasa, R.; Panish, M. B.; Temkin, H. // Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1441 

    The orientation of CdTe grown epitaxially onto clean (100) GaAs by molecular beam epitaxy can be predetermined by the GaAs precursor surface reconstruction that is present where the CdTe growth is initiated. A Ga-stabilized GaAs starting surface yields CdTe (111) and an As-stabilized GaAs...

  • Growth of InSb and InAs1-xSbx on GaAs by molecular beam epitaxy. Chyi, J.-I.; Kalem, S.; Kumar, N. S.; Litton, C. W.; Morkoç, H. // Applied Physics Letters;9/19/1988, Vol. 53 Issue 12, p1092 

    InSb and InAs1-xSbx epitaxial layers have been successfully grown on (100)GaAs substrates by molecular beam epitaxy. Remarkably good morphologies were obtained despite the large lattice mismatch (14%) between InSb and GaAs. Room-temperature electron mobilities as high as 57 000 cm2/V s were...

  • Reverse-biased performance of a molecular-beam-epitaxial-grown AlGaAs/GaAs high-power optothyristor for pulsed power-switching applications. Zhao, J. H.; Burke, T.; Weiner, M.; Chin, A.; Ballingall, J. M. // Journal of Applied Physics;10/15/1993, Vol. 74 Issue 8, p5225 

    Presents a study that examined the reverse-biased performance of a molecular-beam-epitaxy-grown high-power optothyristor for pulsed power-switching applications. Background of semi-insulating gallium arsenide photoconductive switches; Circuit diagram for optothyristor testing and low-inductance...

  • Far-infrared study of a laterally confined electron gas formed by molecular beam epitaxial.... Arnone, D.D.; Cina, S. // Applied Physics Letters;7/28/1997, Vol. 71 Issue 4, p497 

    Examines the laterally confined electron gas formed by molecular beam epitaxy regrowth on patterned (100) n[sup +]-gallium arsenide (GaAs) substrate. Use of far-infrared cyclotron resonance spectroscopy; Determination of confinement energies and width by magnetoresistance measurements; Effect...

  • Stacked GaAs multi-quantum wires grown on vicinal GaAs(110) surfaces by molecular beam epitaxy. Kato, Takehiko; Takeuchi, Toshikazu; Inoue, Yoshiji; Hasegawa, Shigehiko; Inoue, Koichi; Nakashima, Hisao // Applied Physics Letters;1/26/1998, Vol. 72 Issue 4, p465 

    Stacked GaAs quantum wires (QWRs) are grown on the surfaces with giant steps which are naturally formed on vicinal GaAs(110) substrates by molecular beam epitaxy. Transmission electron microscopy observation clearly shows stacked structures of coherently aligned quantum wires which are induced...

  • Peak electron mobilities between 2.75 and 3.32×105 cm2 V-1 s-1 in GaAs grown by molecular beam epitaxy with As2. Stanley, C. R.; Holland, M. C.; Kean, A. H. // Applied Physics Letters;11/5/1990, Vol. 57 Issue 19, p1992 

    Exceptionally pure n-GaAs has been grown without intentional doping by solid-source molecular beam epitaxy (MBE) using arsenic dimers (As2). Peak electron mobilities in the range 2.75–3.32×105 cm2 V-1 s-1 at temperatures of ≊40–50 K with free-electron densities...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics