Suppression of lateral Ti silicide growth by ion beam mixing and rapid thermal annealing

Ku, Y. H.; Lee, S. K.; Shih, D. K.; Kwong, D. L.; Lee, C-O; Yeargain, J. R.
March 1988
Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p877
Academic Journal
One of the most important issues in the self-aligned silicide technology has been lateral silicide formation over the sidewall oxide spacers. In this work, the lateral silicide growth has been considerably suppressed by the use of ion beam mixing and rapid thermal annealing. Metal-oxide-semiconductor transistors fabricated using this technology show good electrical characteristics with negligible conduction between gate and source/drain electrodes.


Related Articles

  • Titanium disilicide formation by sputtering of titanium on heated silicon substrate. Tanielian, M.; Blackstone, S. // Applied Physics Letters;1984, Vol. 45 Issue 6, p673 

    We have sputter deposited titanium on bare silicon substrates at elevated temperatures. We find that at a substrate temperature of about 515 °C titanium silicide is formed due to the reaction of the titanium with the Si. The resistivity of the silicide is about 15 μΩ cm and it is not...

  • Reaction between Cu and TiSi2 across different barrier layers. Chang, Chin-An; Hu, Chao-Kun // Applied Physics Letters;8/6/1990, Vol. 57 Issue 6, p617 

    The reaction between Cu and TiSi2 is studied with and without barriers, Cu being used for interconnect and TiSi2 as the gate silicide for the metal-oxide-semiconductor devices. The barriers include Ta, TiN, and W. Without a barrier, Cu reacts with TiSi2 below 300 °C, forming Cu silicides. An...

  • Formation of cobalt silicide spikes in 0.18 μm complementary metal oxide semiconductor process. Dai, J. Y.; Guo, Z. R.; Tee, S. F.; Tay, C. L.; Er, Eddie; Redkar, S. // Applied Physics Letters;5/14/2001, Vol. 78 Issue 20, p3091 

    Co silicide spikes have been found in active contact salicidation in complementary metal oxide semiconductor devices during failure analysis by means of transmission electron microscopy examination. Scanning transmission electron microscopy, energy dispersive x-ray analysis and microdiffraction...

  • Dopant redistribution during titanium silicide formation. Amano, Jun; Merchant, P.; Cass, T. R.; Miller, J. N.; Koch, Tim // Journal of Applied Physics;4/15/1986, Vol. 59 Issue 8, p2689 

    Presents a study on the dopant redistribution of advanced metal-oxide-semiconductor structures during silicide formation. Components of the loss mechanisms from TiSi[sub2] layer; Results of annealing techniques; Surface topography of the TiSi[sub2] layer.

  • Interactions of thin Ti films with Si, SiO2, Si3N4, and SiOxNy under rapid thermal annealing. Morgan, A. E.; Broadbent, E. K.; Ritz, K. N.; Sadana, D. K.; Burrow, B. J. // Journal of Applied Physics;7/1/1988, Vol. 64 Issue 1, p344 

    Deals with the interactions of thin titanium films with substrates under rapid annealing. Information on a proposed self-aligned silicide technology using titanium silicon[sub2] for metal-oxide-semiconductor devices; Details on the standards salicide process; Discussion on the experiment and...

  • Experimental investigation of a PtSi source and drain field emission transistor. Snyder, John P.; Helms, C.R. // Applied Physics Letters;9/4/1995, Vol. 67 Issue 10, p1420 

    Presents an experimental investigation of platinum silicide source and drain field emission metal oxide semiconductor field effect transistor with low temperature operation. Presentation of an optimized process flow mechanism; Demonstration under Gate curves and Drain curves; Existence of...

  • Local identification and mapping of the C49 and C54 titanium phases in submicron structures by.... De Wolf, I.; Howard, D.J.; Lauwers, A.; Maex, K.; Maes, H.E. // Applied Physics Letters;4/28/1997, Vol. 70 Issue 17, p2262 

    Examines the effectiveness of micro-Raman spectroscopy in identifying and mapping C49 and C54 phases of titanium silicide in submicron structures. Characteristics of silicide materials used in the study; Demonstration of the phase mapping ability of the technique; Use of complementary...

  • Silicon loss during TiSi2 formation. Cohen, C.; Nipoti, R.; Siejka, J.; Bentini, G. G.; Berti, M.; Drigo, A. V. // Journal of Applied Physics;6/1/1987, Vol. 61 Issue 11, p5187 

    Focuses on a study which determined silicon loss in titanium silicide formation. Existence of contaminants in the formation of silicides by annealing metal-silicon couples; Methodology of the study; Results of the study.

  • In situ characterization of titanium silicide formation: The effect of Mo interlayer,... Zhang, S.-L.; Lavoie, C. // Journal of Applied Physics;3/1/1999, Vol. 85 Issue 5, p2617 

    Studies the formation of titanium silicide using in situ x-ray diffraction with millisecond time resolution and sheet resistance measurements. Experimental details; Results and discussion; Conclusions.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics