TITLE

Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy

AUTHOR(S)
Tatsumi, Toru; Hirayama, Hiroyuki; Aizaki, Naoaki
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p895
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GexSi1-x heterobase n-p-n heterojunction bipolar transistor structure has been grown completely by Si molecular beam epitaxy for the first time. A collector-top type design was adopted. The 3000 Å p-type Ge0.3Si0.7 heterobase layer with 5×1019 cm-3 doping level was grown on an emitter layer which was an arsenic highly doped substrate (7×1019 cm-3), followed by a 5000 Å n-type Si collector layer with 7×1017 cm-3 doping level. Low-temperature device processes under 650 °C were used to avoid thermal diffusion of impurities. Common-emitter current gain hFE with a 100-μm-diam emitter was 15 at 2×104 A/cm2 collector current density. Compared with a usual Si-base bipolar transistor of the same size and doping level, an improvement in current gain was observed. Furthermore, GexSi1-x/Si (x=0.1–0.4) p-n junction interfaces were investigated by current-voltage and capacitance-voltage measurements and transmission electron microscopy observation.
ACCESSION #
9826246

 

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