CoSi2 and Si epitaxial growth in <111> Si submicron lines with application to a permeable base transistor

Glastre, G.; Rosencher, E.; d’Avitaya, F. Arnaud; Puissant, C.; Pons, M.; Vincent, G.; Pfister, J. C.
March 1988
Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p898
Academic Journal
We report for the first time the epitaxy of CoSi2 on <111> Si submicron lines together with the overgrowth of Si on top of the resulting grating. Results indicate that strain fields and huge mass transport control the morphology of the resulting structures. Silicon is shown to grow two dimensionally when the grating period is in the submicrometer range. Preliminary results on the electrical performance of those Si/CoSi2 /Si permeable base transistors are presented.


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