Large-area defect-free silicon-on-insulator films by zone-melt recrystallization

Pandya, R.; Martinez, A.
March 1988
Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p901
Academic Journal
Large areas of defect-free silicon-on-insulator (SOI) films have been obtained by softening (lowering the viscosity) a layer underlying the silicon film. During zone-melt recrystallization this sublayer provides a stress relief mechanism and relieves mechanical constraints for the growing crystal. Using this technique we have been able to obtain recrystallized silicon films that show significant improvement over the typical material obtained in samples without the soft layer recrystallized under identical conditions. We have reproducibly obtained SOI films that contain large areas that are free of subgrain boundaries as well as other defects such as twin boundaries and threading dislocations.


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