TITLE

Large-area defect-free silicon-on-insulator films by zone-melt recrystallization

AUTHOR(S)
Pandya, R.; Martinez, A.
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Large areas of defect-free silicon-on-insulator (SOI) films have been obtained by softening (lowering the viscosity) a layer underlying the silicon film. During zone-melt recrystallization this sublayer provides a stress relief mechanism and relieves mechanical constraints for the growing crystal. Using this technique we have been able to obtain recrystallized silicon films that show significant improvement over the typical material obtained in samples without the soft layer recrystallized under identical conditions. We have reproducibly obtained SOI films that contain large areas that are free of subgrain boundaries as well as other defects such as twin boundaries and threading dislocations.
ACCESSION #
9826241

 

Related Articles

  • Effects of silicon-on-insulator substrate on the residual stress within 3C-SiC/Si thin films. Park, J.-H.; Kim, J.H.; Kim, Y.; Lee, B.-T.; Jang, S.-J.; Moon, C.-K.; Song, H.-J. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1989 

    Single-crystalline 3C-SiC heteroepitaxial layers were grown on silicon-on-insulator (SOI) and Si wafers, to investigate effects of SOI substrates on the film quality. Residual stress measurement using a laser scan method and the Raman scattering spectroscopy indicated that internal stress within...

  • New opportunities emerge for thin silicon-on-insulator tech. Ailles, Michael L. // Electronic News;10/13/97, Vol. 43 Issue 2189, p80 

    Focuses on thin silicon-on-insulator (SOI) technology. Background on the SOI technology; Adoption of thin SOI circuits; Wafer bonding approach; Projected growth of the market for thin SOI materials; Bulk silicon technologies as competitor of thin SOI technology.

  • Boron pile up and clustering in silicon-on-insulator films. Vuong, H.-H.; Gossmann, H.-J.; Pelaz, L.; Celler, G.K.; Jacobson, D.C.; Barr, D.; Hergenrother, J.; Monroe, D.; Venezia, V.C.; Rafferty, C.S.; Hillenius, S.J.; McKinley, J.; Stevie, F.A.; Granger, C. // Applied Physics Letters;8/23/1999, Vol. 75 Issue 8, p1083 

    Studies the dopant-defect interaction in silicon-on-insulator material for a certain range of silicon film thicknesses. Locations of boron pileup; Defect-induced boron clustering; Comparison with clustering in bulk silicon.

  • Self-consistent quantum-mechanical calculations in ultrathin silicon-on-insulator structures. Ouisse, T. // Journal of Applied Physics;11/15/1994, Vol. 76 Issue 10, p5989 

    Presents self-consistent quantum-mechanical calculations in ultrathin silicon-on-insulator (SOI) structures. Various applications of SOI devices; Calculation procedure used in the study; Comparison between SOI and bulk silicon MOS structures.

  • Enhancement of lateral solid phase epitaxy over SiO2 using a densified and thinned amorphous Si layer. Kusukawa, K.; Moniwa, M.; Ohkura, M.; Takeda, E. // Applied Physics Letters;2/5/1990, Vol. 56 Issue 6, p560 

    Formation of a thin-film silicon-on-insulator structure by lateral solid phase epitaxy of amorphous Si is described. Thinning of the amorphous Si layer after deposition and densification in an ultrahigh vacuum, prior to solid phase epitaxy, successfully enhances the lateral growth length. In...

  • Raman-microprobe study of stress and crystal orientation in laser-crystallized silicon. Kolb, G.; Salbert, Th.; Abstreiter, G. // Journal of Applied Physics;3/1/1991, Vol. 69 Issue 5, p3387 

    Presents a study which determined the spatial variation of stress and crystal orientation in laser-crystallized silicon-on-insulator films. Use of the Raman-microprobe technique; Factors which resulted to defects in the silicon layer; Assessment of the accuracy of wavelength measurements.

  • Electrical transport and related properties of zone-melt-recrystallized silicon-on-insulator films. Thompson, L. R.; Collins, G. J.; Stein, H. J. // Journal of Applied Physics;5/15/1991, Vol. 69 Issue 10, p7111 

    Investigates the electrical transport properties of zone-melt-recrystallized silicon (SOI) films of silicon-on-insulator wafers using resistivity and Hall effect measurements. Applications of SOI thin films; Methodology of wafer fabrication; Discussion on the results of the experiment.

  • Pillar-lattice-assisted stress-free silicon-on-insulator. Haisma, Jan // Applied Physics Letters;10/20/2003, Vol. 83 Issue 16, p3323 

    Standard silicon-on-insulator (SOI) technology is hampered by dilatation mismatch between silicon and its thermal oxide: the thin silicon top-layer is subjected to tensile stress. However, by combining three advanced technologies: covalent bonding, nanoimprint lithography, and Smart-Cut...

  • Preparation of multilayered thin silicon-on-insulator structure by low-energy oxygen ion.... Ishikawa, Yukari; Shibata, Noriyoshi // Applied Physics Letters;9/28/1992, Vol. 61 Issue 13, p1543 

    Examines the fabrication of multilayered thin silicon-on-insulator films by oxygen ion implantation. Growth of silicon by molecular beam epitaxy; Investigation of cross-sectional microstructures by transmission electron microscopy; Determination of crystal quality by electron diffraction;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics