Large-area defect-free silicon-on-insulator films by zone-melt recrystallization

Pandya, R.; Martinez, A.
March 1988
Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p901
Academic Journal
Large areas of defect-free silicon-on-insulator (SOI) films have been obtained by softening (lowering the viscosity) a layer underlying the silicon film. During zone-melt recrystallization this sublayer provides a stress relief mechanism and relieves mechanical constraints for the growing crystal. Using this technique we have been able to obtain recrystallized silicon films that show significant improvement over the typical material obtained in samples without the soft layer recrystallized under identical conditions. We have reproducibly obtained SOI films that contain large areas that are free of subgrain boundaries as well as other defects such as twin boundaries and threading dislocations.


Related Articles

  • Thermal analysis of incandescent lamp zone-melting recrystallization of thin silicon films. Robinson, Richard D.; Miaoulis, Ioannis N. // Journal of Applied Physics;1/1/1993, Vol. 73 Issue 1, p439 

    Provides information on a study that developed a two-dimensional numerical simulation of incandescent lamp zone-melting recrystallization (ZMR) of silicon-on insulator wafers to investigate the critical thermal processing parameters. Three significant thermal parameters affecting lamp ZMR;...

  • New opportunities emerge for thin silicon-on-insulator tech. Ailles, Michael L. // Electronic News;10/13/97, Vol. 43 Issue 2189, p80 

    Focuses on thin silicon-on-insulator (SOI) technology. Background on the SOI technology; Adoption of thin SOI circuits; Wafer bonding approach; Projected growth of the market for thin SOI materials; Bulk silicon technologies as competitor of thin SOI technology.

  • Effects of silicon-on-insulator substrate on the residual stress within 3C-SiC/Si thin films. Park, J.-H.; Kim, J.H.; Kim, Y.; Lee, B.-T.; Jang, S.-J.; Moon, C.-K.; Song, H.-J. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1989 

    Single-crystalline 3C-SiC heteroepitaxial layers were grown on silicon-on-insulator (SOI) and Si wafers, to investigate effects of SOI substrates on the film quality. Residual stress measurement using a laser scan method and the Raman scattering spectroscopy indicated that internal stress within...

  • Absence of electrical activity at high-angle grain boundaries in zone-melt-recrystallized.... Evans, P.V.; Smith, D.A. // Applied Physics Letters;1/27/1992, Vol. 60 Issue 4, p439 

    Examines the use of zone-melt-recrystallization of silicon-on-insulator films for electrical characterization of tilt grain boundaries. Absence of defect gap states after high-temperature annealing; Implication of electron channeling patterns for the misorientation of grain boundaries;...

  • Perforation seed structure in electron beam recrystallized silicon-on-insulator films. Horita, Susumu; Ishiwara, Hiroshi // Applied Physics Letters;3/23/1987, Vol. 50 Issue 12, p748 

    A novel perforation seed structure in electron beam recrystallization of silicon-on-insulator (SOI) films has been proposed, in which seed regions typically with rectangular shapes are separately arranged along a line, so that voids are not generated in the films during the melting and...

  • Orientation control of the silicon film on insulator by laser recrystallization. Sugahara, K.; Kusunoki, S.; Inoue, Y.; Nishimura, T.; Akasaka, Y. // Journal of Applied Physics;11/15/1987, Vol. 62 Issue 10, p4178 

    Deals with a study which investigated the influence of the growth direction and the solidification speed on crystal quality of the silicon (Si)-on-insulator (SOI) film by laser recrystallization. Relation between liquid-solid interface and planes responsible for crystal growth; Growth direction...

  • Mechanics of the silica cap during zone melting of Si films. Dutartre, D. // Journal of Applied Physics;8/1/1989, Vol. 66 Issue 3, p1388 

    Presents information on a study which performed zone melting recrystallization of polycrystalline silicon films on oxidized wafers using linear strip heaters to obtain good quality silicon-on-insulator (SOI) films. Elimination of the effects related to variations of the in-plane...

  • Hydrogen as the cause of pit formation during laser recrystallization of silicon-on-insulator films. Willems, G. J.; Maes, H. E. // Journal of Applied Physics;11/1/1989, Vol. 66 Issue 9, p4444 

    Studies the formation of pits during laser recrystallization of silicon-on-insulator films. Overview of chemically vapor deposited (CVD) materials tested for their ability to induce pits; Hypothesis of growing gas bubbles; Ability of CVD materials to induce pits after an anneal treatment.

  • Heteroepitaxial Growth of Novel SOI Material Si/γ-Al[sub 2]O[sub 3]/Si. Wang, Qi-Yuan; Tan, Li-Wen; Wang, Jun; Yu, Yuan-Huan; Lin, Lan-Ying // International Journal of Modern Physics B: Condensed Matter Phys;11/20/2002, Vol. 16 Issue 28/29, p4271 

    In this paper, we report the fabrication of Si-based double hetero-epitaxial SOI materials Si/γAl[sub 2]O[sub 3]/Si. First, single crystalline γ-Al[sub 2]O[sub 3] (100) insulator films were grown epitaxially on Si(100) by LPCVD, and then, Si(100) epitaxial films were grown on γ-Al[sub...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics