Novel high-speed transistor based on charge emission from a quantum well

Kastalsky, A.; Grinberg, A.
March 1988
Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p904
Academic Journal
A novel unipolar transistor employing properties of electrons confined in a single quantum well is proposed. The gate modulation of a charge density in the quantum well results in an exponentially strong variation of the output thermionic emission current to the collector. The device combines the attractive features of both bipolar and field-effect transistors and provides a high speed (2–3 ps intrinsic delay time) with a large current drive (∼105 A/cm2) and high transconductances (1–10 S/mm).


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