Enhancement of carrier lifetime in silicon-doping superlattices

Landheer, D.; Denhoff, M. W.; Buchanan, M.; Jackman, T. E.; McKinnon, G. H.; Teo, K. H.; Jackman, J. A.
March 1988
Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p910
Academic Journal
Silicon-doping superlattices have been grown by molecular beam epitaxy by using a Knudsen cell with boron oxide for p doping and an ion beam doper with arsenic for n doping. Depositions were done through an etched silicon mask to create nini and pipi regions at the edges of mesas to which selective contacts were made with the use of AuSb and PtSi. Recombination lifetimes as long as 14 ms have been measured at 77 K by carrier injection from 503 nm light pulses.


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