TITLE

Enhancement of carrier lifetime in silicon-doping superlattices

AUTHOR(S)
Landheer, D.; Denhoff, M. W.; Buchanan, M.; Jackman, T. E.; McKinnon, G. H.; Teo, K. H.; Jackman, J. A.
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p910
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Silicon-doping superlattices have been grown by molecular beam epitaxy by using a Knudsen cell with boron oxide for p doping and an ion beam doper with arsenic for n doping. Depositions were done through an etched silicon mask to create nini and pipi regions at the edges of mesas to which selective contacts were made with the use of AuSb and PtSi. Recombination lifetimes as long as 14 ms have been measured at 77 K by carrier injection from 503 nm light pulses.
ACCESSION #
9826236

 

Related Articles

  • Structure and optical properties of Ge-Si ordered superlattices. Bevk, J.; Ourmazd, A.; Feldman, L. C.; Pearsall, T. P.; Bonar, J. M.; Davidson, B. A.; Mannaerts, J. P. // Applied Physics Letters;3/23/1987, Vol. 50 Issue 12, p760 

    We report the synthesis, structural characterization, and optical studies of ultrathin Ge-Si superlattices, grown by molecular beam epitaxy, on (001) silicon substrates. Structures consist of alternating layers of pure Ge and Si, with layer thicknesses of 1, 2, 4, and 6 monolayers. Using...

  • X-ray characterization of Si delta-doping in GaAs. Hart, L.; Fahy, M.R.; Newman, R.C.; Fewster, P.F. // Applied Physics Letters;5/3/1993, Vol. 62 Issue 18, p2218 

    Examines the structural properties of a delta-doped superlattice grown by molecular beam epitaxy. Percentage of the period variation; Location of silicon atoms; Use of the high-resolution triple-axis diffractometer.

  • Epitaxial growth of germanium dots on Si(001) surface covered by a very thin silicon oxide layer. Barski, A.; Derivaz, M.; Rouviere, J. L.; Rouviere, J.L.; Buttard, D. // Applied Physics Letters;11/27/2000, Vol. 77 Issue 22 

    We show that germanium dots can be directly grown by molecular beam epitaxy (MBE) on a silicon (001) surface covered by a thin (1.2-nm-thick) thermal silicon oxide layer. We describe the experimental procedure, which induces the growth of a high density (10[sup 11]/cm[sup 2]) of nanometric...

  • Boron redistribution in doping superlattices grown by silicon molecular beam epitaxy using B2O3. Jackman, T. E.; Houghton, D. C.; Denhoff, M. W.; Kechang, Song; McCaffrey, J.; Jackman, J. A.; Tuppen, C. G. // Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p877 

    Coevaporation of B2O3 during silicon molecular beam epitaxy has been used to prepare heavily doped superlattices (pipi’s). Full activation up to 3×1020 cm-3 (100 times the solid solubility limit) was obtained at growth temperatures below 700 °C. Significant boron redistribution has...

  • Growth and modeling of highly doped, thin-layer silicon-modulation-doped superlattices by intermittent solid-phase epitaxy. Ahlers, E. D.; Allen, F. G. // Journal of Applied Physics;10/15/1987, Vol. 62 Issue 8, p3190 

    Examines the growth of silicon superlattices by molecular-beam epitaxy (MBE) with doping profiles for measuring photoluminescence spectra. Use of a Varian ultrahigh-vacuum chamber; Amorphous deposition and solid-phase epitaxial growth; Application to MBE growth of n-i-p-i superlattices.

  • Novel relaxation process in strained Si/Ge superlattices grown on Ge (001). Wegscheider, W.; Eberl, K.; Abstreiter, G.; Cerva, H.; Oppolzer, H. // Applied Physics Letters;10/8/1990, Vol. 57 Issue 15, p1496 

    A new mode of misfit defect formation has been observed for the first time in high quality Si/Ge strained-layer superlattices grown by molecular beam epitaxy on Ge(001). In order to investigate the transition from coherent to incoherent growth we have studied a set of samples with a varying...

  • X-ray diffraction analysis of Si1-xGex/Si superlattices. Mai, Z. H.; Ouyang, J. T.; Cui, S. F.; Li, J. H.; Wang, C. Y.; Li, C. R. // Journal of Applied Physics;10/15/1992, Vol. 72 Issue 8, p3474 

    Presents a study which investigated the Si[sub1-subx]Ge[subx]/Si strained-layer superlattices grown by molecular beam epitaxy on silicon substrates by x-ray double crystal diffraction and x-ray grazing incidence diffraction. Components of the superlattices; Discussion on lattice relaxation;...

  • Selective epitaxial growth of gallium arsenide by molecular beam epitaxy. Okamoto, A.; Ohata, K. // Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1512 

    GaAs was selectively grown on GaAs substrates patterned with SiO2 by conventional molecular beam epitaxy (MBE). No growth was found on SiO2, except for small GaAs particles, when the substrate temperature was above 700 °C under 1.2×10-5 Torr arsenic pressure. With the increase in the...

  • Molecular-beam epitaxial growth and microstructural characterization of GaAs on Si with a buried implanted oxide. Das, K.; Humphreys, T. P.; Posthill, J. B.; Tarn, J. C. L.; Wortman, J. J.; Parikh, N. R. // Journal of Applied Physics;10/15/1988, Vol. 64 Issue 8, p3934 

    Presents a study that demonstrated the direct growth of gallium arsenide by molecular beam epitaxy on nominally-oriented silicon with a buried implanted oxide. Experimental procedure; Results; Discussion.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics