Laser-induced homoepitaxy of GaP

Solanki, R.; Sudarsan, U.; Johnson, J. C.
March 1988
Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p919
Academic Journal
Laser-induced pyrolytic process is utilized to ‘‘direct write’’ epitaxial GaP structures. The precursors used were trimethylgallium and tertiarybutylphosphine, a new phosphorus donor. Dependence of the epitaxial growth on several deposition parameters is examined.


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