Lattice location of heavily doped As atoms in Si films grown by partially ionized molecular beam epitaxy

Sugiyama, Tetsuya; Itoh, Tadatsugu
March 1988
Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p883
Academic Journal
Lattice location of heavily doped As atoms in Si epitaxial films grown by partially ionized molecular beam epitaxy was investigated. It was revealed from carrier concentration measurements and Rutherford backscattering studies that the electrical activity was smaller than the fraction of substitutional As atoms below a substrate temperature of 800 °C. It may be due to the presence of inactive substitutional As atoms located in slightly displaced sites from the lattice. Activation energies of 1.76 and 0.84 eV were obtained for electrical activity and for a fraction of substitutional As atoms, respectively.


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