TITLE

Lattice location of heavily doped As atoms in Si films grown by partially ionized molecular beam epitaxy

AUTHOR(S)
Sugiyama, Tetsuya; Itoh, Tadatsugu
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p883
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Lattice location of heavily doped As atoms in Si epitaxial films grown by partially ionized molecular beam epitaxy was investigated. It was revealed from carrier concentration measurements and Rutherford backscattering studies that the electrical activity was smaller than the fraction of substitutional As atoms below a substrate temperature of 800 °C. It may be due to the presence of inactive substitutional As atoms located in slightly displaced sites from the lattice. Activation energies of 1.76 and 0.84 eV were obtained for electrical activity and for a fraction of substitutional As atoms, respectively.
ACCESSION #
9826212

 

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