TITLE

Temperature dependence of electron mobility and peak velocity in compensated GaAs

AUTHOR(S)
Xu, Jingming; Shur, Michael
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p922
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The temperature dependences of electron mobility and peak velocity in compensated GaAs have been calculated by using a Monte Carlo technique. It is found that both mobility and peak velocity are substantially reduced and less temperature dependent in compensated material because of an increased impurity scattering.
ACCESSION #
9826201

 

Related Articles

  • Monte Carlo calculation of the low-temperature mobility of two-dimensional electrons in a quantum well in a selectively doped GaAs-based heterostructure. Borzdov, V. M.; Mulyarchik, S. G.; Khomich, A. V. // Technical Physics Letters;Dec97, Vol. 23 Issue 12, p935 

    The feasibility of Monte Carlo calculations of the mobility of two-dimensional electrons in a square quantum well in GaAs/AlGaAs heterostructures in a low electric field E = 100 V/m is demonstrated and results are presented for temperatures of 4.2 and 77 K. The dependence of the mobility on the...

  • Monte Carlo simulation of the induced signal in semi-insulating GaAs detectors. Cola, Adriano; Reggiani, Lino; Vasanelli, Lorenzo // Applied Physics Letters;9/21/1998, Vol. 73 Issue 12 

    We develop a Monte Carlo simulator of the charge signal induced by an external radiation on semi-insulating GaAs detectors. Trapping and detrapping processes and the dynamics of generated carriers are consistently accounted for. The relative contributions to the charge signal of fast- and...

  • Ultrafast relaxation of hot minority carriers in p-GaAs. Alencar, A. M.; Sampaio, A. J. C.; Freire, V. N.; da Costa, J. Alzamir P. // Journal of Applied Physics;8/1/1993, Vol. 74 Issue 3, p2122 

    Examines the dynamics of hot minority carriers in p-gallium arsenide (GaAs) for doping concentrations. Dynamical equation of the energy of the minority carrier in p-GaAs; Use of Monte Carlo method; Theoretical description of the relaxation process of hot minority carriers.

  • Numerical study of the wave-vector dependence of the electron interband impact ionization rate in bulk GaAs. Wang, Yang; Brennan, Kevin F. // Journal of Applied Physics;7/15/1994, Vol. 76 Issue 2, p974 

    Presents a study which reported ensemble Monte Carlo calculations of the electron interband impact ionization rate in bulk gallium arsenide (GaAs) using a wave-vector (k)-dependent formulation of the ionization transition rate. Discussion on the presentation of theories of interband impact...

  • A model for the current instabilities in GaAs-AlGaAs heterojunction. van Hall, P. J.; Kökten, H. // Journal of Applied Physics;2/15/1996, Vol. 79 Issue 4, p1955 

    Presents a study which proposed a model for the description of the current instabilities in gallium arsenide (GaAs)-AlGaAs heterojunction. Methodology; Monte Carlo simulation of capture; Results of the study.

  • Monte Carlo studies of steady-state electronic transport in compensated In0.53Ga0.47As. Costa, Julio; Peczalski, Andrzej; Shur, Michael // Journal of Applied Physics;6/15/1989, Vol. 65 Issue 12, p5205 

    Presents a study which investigated a Monte carlo studies of steady-state electronic transport in compensated indium[sub0.53]gallium[0.47]arsenide. Role of alloy scattering in the low-temperature regime; Information on several scattering mechanisms; Results and discussion.

  • Impact of field-dependent electronic trapping across Coulomb repulsive potentials on low frequency charge oscillations. Joshi, R. P.; Schoenbach, K. H.; Raha, P. K. // Journal of Applied Physics;4/15/1994, Vol. 75 Issue 8, p4016 

    Focuses on a study which performed Monte Carlo simulations to obtain the field dependence of electronic trapping across repulsive potentials in gallium arsenide. Findings of the electronic capture coefficient; Factor influencing the overall shape; Examination of the stability of compensated...

  • Monte Carlo based calculations of hole transport including the hole-plasmon interaction in degenerate bulk GaAs. Mansour, Nabil S.; Wang, Yang; Brennan, Kevin F. // Journal of Applied Physics;4/15/1994, Vol. 75 Issue 8, p4009 

    Presents information on a study which examined the effect of the hole-plasmon interaction on the calculated bulk transport properties of degenerate gallium arsenide by Monte Carlo calculations. Factors attributed to the complication faced by transport studies of degenerate semiconductor...

  • Spatial extent of the correlation between local diffusion noise sources in GaAs. Mateos, Javier; González, Tomás; Pardo, Daniel // Journal of Applied Physics;2/15/1995, Vol. 77 Issue 4, p1564 

    Focuses on a study which examined the existence of spatial correlation between local noise sources and the distance over which it extends in homogeneous gallium arsenide under different applied electric fields. Theoretical analysis; Monte Carlo simulation; Results and discussion.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics