TITLE

Band structure of metallic pyrochlore ruthenates Bi2Ru2O7 and Pb2Ru2O6.5

AUTHOR(S)
Hsu, William Y.; Kasowski, Robert V.; Miller, Thomas; Chiang, Tai-Chang
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p792
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The band structure of Bi2Ru2O7 and Pb2Ru2O6.5 has been computed self-consistently from first principles for the first time by the pseudofunction method. We discover that the 6s bands of Bi and Pb are very deep and unlikely to contribute to the metallic behavior as previously believed. The unoccupied 6p bands, however, are only several eV above the Fermi energy and are mixed with the Ru 4d band at the Fermi surface via the framework O atoms, leading to band conduction and delocalized magnetic moments. The predicted location of the 6s bands and the location and width of the O 2p band are confirmed by synchrotron radiation and ultraviolet electron spectroscopy of single crystals.
ACCESSION #
9826187

 

Related Articles

  • Experimental determination of the N-p-partial density of states in the conduction band of GaN:... Katsikini, M.; Paloura, E.C.; Moustakas, T. D. // Journal of Applied Physics;2/1/1998, Vol. 83 Issue 3, p1437 

    Presents a study which investigated the N-p-partial density of states in the conduction band of GaN. What is GaN; Values of the direct band gap of GaN; Experimental conditions; Results of this study.

  • On the Specific Features and Transformation of the Band Structure of Mercury-Based HTSC Compounds. Elizarova, M. V.; Lukin, A. O.; Gasumyants, V. É. // Physics of the Solid State;Dec2000, Vol. 42 Issue 12, p2188 

    A systematic analysis of the temperature dependences of the thermopower S(T) for different phases of the HgBa[sub 2]Ca[sub n-1]Cu[sub n]O[sub 2n+2 +δ] family (n = 1, 2, 3) at different doping levels is performed in the framework of a narrow-band phenomenological model. Quantitative estimates...

  • AlGaAsSb lasers emitting in the 1.6 μm region. Danilova, T. N.; Zhurtanov, B. E.; Imenkov, A. N.; Sipovskaya, M. A.; Yakovlev, Yu. P. // Technical Physics Letters;May99, Vol. 25 Issue 5, p395 

    AlGaAsSb lasers with different Al concentrations in the active and confinement regions are fabricated and investigated. The structures lase in the region ∼1.6μm. The AlGaAsSb solid solution in the active region is a direct-gap material with a small energy separation (∼ 56 meV)...

  • A Model of Conduction in Carbon Nanopipe Bundles and Films. Kaminskiı, V. É. // Semiconductors;Oct2000, Vol. 34 Issue 10, p1199 

    To describe electron transport in nanopipes, a two-band model with a very narrow band gap was proposed. In the effective mass approximation, the Hamiltonian of quasiparticle kinetic energy was found to be isotropic and strongly nonparabolic. Formulas for the rates of momentum relaxation by...

  • Thermally Stimulated Currents in MnIn[sub 2]S[sub 4] Single Crystals. Niftiev, N. N. // Semiconductors;Jul2002, Vol. 36 Issue 7, p782 

    Fast-attachment levels were detected in the band gap of MnIn[sub 2]S[sub 4] single crystals by studying the thermally stimulated currents. The depth of the levels, the concentration of traps, and the cross sections for capture by these traps were determined. Based on the methods of thermally...

  • Model of deep and shallow traps for the crystal Ba[sub 0.77] Ca[sub 0.23] TiO[sub 3]. Matusevich, V.; Kiessling, A.; Kowarschik, R. // Applied Physics B: Lasers & Optics;2001, Vol. 72 Issue 4, p435 

    Abstract. A model of deep and shallow traps has been applied in order to explain the temporal development of the signal wave amplification as well as the pump wave depletion in two-wave-mixing experiments in the crystal Ba[sub 0.23]Ca[sub 0.77]TiO[sub 3] (BCT). The intensities of the outgoing...

  • The role of defects in the formation of local states induced by atoms adsorbed on a semiconductor surface. Davydov, S. Yu. // Semiconductors;Oct97, Vol. 31 Issue 10, p1062 

    The generalized Anderson-Haldane band model of a semiconductor is used to consider the influence of quasi-localized electron states in the band gap on states induced by metal atoms adsorbed on the semiconductor surface. The formation of the Schottky barrier is discussed for low degrees of metal...

  • A simple but accurate ‘‘core-tail’’ pseudopotential approach to the calculation of the conduction-band energy V0 of quasifree excess electrons and positrons in nonpolar fluids. Plenkiewicz, B.; Frongillo, Y.; Lopez-Castillo, J.-M.; Jay-Gerin, J.-P. // Journal of Chemical Physics;6/8/1996, Vol. 104 Issue 22, p9053 

    The conduction-band minimum energy V0 (relative to vacuum) of quasifree excess electrons and positrons in fluid rare gases, methane, and silane is calculated as a function of fluid density n. The calculations are performed within the framework of the Wigner–Seitz mean-field approximation...

  • Discretization of a continuum coupled to a discrete state by tridiagonalizing the Schrödinger equation. Schek, Israel; Wyatt, Robert E. // Journal of Chemical Physics;10/15/1988, Vol. 89 Issue 8, p4924 

    A new approach to discretization of a continuous band coupled to a discrete state is provided by the Lanczos tridiagonalization procedure, which uses linked moments of the continuum with respect to the discrete state. Numerical convergence of this scheme is shown for two models of the line-shape...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics