TITLE

Influence of coupling of wells on spontaneous emission line shape in GaAs/GaAlAs multiple quantum wells

AUTHOR(S)
Krahl, M.; Christen, J.; Bimberg, D.; Weimann, G.; Schlapp, W.
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p798
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The results of a comparative study of the low-temperature luminescence line shape of molecular beam epitaxially grown GaAs/GaAlAs coupled and uncoupled quantum wells (QW’s) are presented. A pronounced spectral narrowing of the emission line with increasing coupling of QW’s is found. A detailed model for spontaneous emission line shapes for real superlattices is established: The superlattice density of states is calculated in the framework of envelope function approximation. Interface roughness yields Gaussian distribution of layer thicknesses resulting in a broadened density of states. The variance of this distribution function is a measure of interface quality. The reduction of the variance with increased coupling is explained by an enhanced excitonic averaging mechanism in superlattices.
ACCESSION #
9826183

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics