Influence of coupling of wells on spontaneous emission line shape in GaAs/GaAlAs multiple quantum wells

Krahl, M.; Christen, J.; Bimberg, D.; Weimann, G.; Schlapp, W.
March 1988
Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p798
Academic Journal
The results of a comparative study of the low-temperature luminescence line shape of molecular beam epitaxially grown GaAs/GaAlAs coupled and uncoupled quantum wells (QW’s) are presented. A pronounced spectral narrowing of the emission line with increasing coupling of QW’s is found. A detailed model for spontaneous emission line shapes for real superlattices is established: The superlattice density of states is calculated in the framework of envelope function approximation. Interface roughness yields Gaussian distribution of layer thicknesses resulting in a broadened density of states. The variance of this distribution function is a measure of interface quality. The reduction of the variance with increased coupling is explained by an enhanced excitonic averaging mechanism in superlattices.


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