Extremely high negative photoconductivity in p-modulation-doped GaAs quantum wells

Höpfel, R. A.
March 1988
Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p801
Academic Journal
In p-modulation-doped quantum wells of GaAs/AlGaAs extremely high negative photoconductivity is observed at low temperatures. The in-plane sheet resistance can be increased by a factor of more than 60 with illumination of less than 1 W/cm2. Spectral analysis shows that the effect is mainly due to hole trapping in the potential minima of AlGaAs and subsequent recombination of minority electrons.


Related Articles

  • Negative photoconductivity due to carrier drag in GaAs/AlGaAs quantum wells. Juen, S.; Höpfel, R. A.; Gossard, A. C. // Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2097 

    Negative photoconductivity caused by ‘‘carrier drag’’ is experimentally verified for the first time. In p-modulation-doped GaAs/AlGaAs quantum wells carrier drag, leading to ‘‘negative absolute mobility’’ of injected minority electrons, results...

  • Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bonds. Chiu, Y. S.; Ya, M. H.; Su, W. S.; Chen, T. T.; Chen, Y. F.; Lin, H. H. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4943 

    Anisotropic property of type-II GaAs/GaAsSb heterostructures was studied by photoluminescence (PL) and photoconductivity (PC). It was found that the PL and PC spectra exhibit a strong in-plane polarization with respect to 〈011〉 axis with polarization degrees up to 40%. We showed...

  • Noise and photoconductive gain in AlGaAs/GaAs quantum well intersubband infrared photodetectors. Xing, B.; Liu, H. C.; Wilson, P. H.; Buchanan, M.; Wasilewski, Z. R.; Simmons, J. G. // Journal of Applied Physics;8/1/1994, Vol. 76 Issue 3, p1889 

    Focuses on a study which reevaluated the noise and photoconductive gain in aluminum gallium arsenide/gallium arsenide quantum well infrared photodetectors (QWIP). Types of intersubband transitions used in the study; Importance of QWIP on device performance; Background on the theory of...

  • High-speed GaAs/AlGaAs photoconductive detector using a p-modulation-doped multiquantum well structure. Kaede, K.; Arakawa, Y.; Derry, P.; Paslaski, J.; Yariv, A. // Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1096 

    A new type of high-speed GaAs/AlGaAs photoconductive detector utilizing the high drift velocity of minority electrons in a p-modulation doped multiquantum well structure is demonstrated. In this modulation-doped structure, the electron scattering is reduced, which leads to the enhancement of the...

  • Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well. Zhu, Laipan; Liu, Yu; Gao, Hansong; Qin, Xudong; Li, Yuan; Wu, Qing; Chen, Yonghai // Nanoscale Research Letters;Dec2014, Vol. 9 Issue 1, p1 

    We observed an anomalous linear photogalvanic effect (ALPGE) in undoped InGaAs/AlGaAs multiple quantum well and studied its wavelength dependence in details. This effect is believed to originate from the optical momentum alignment effect and the inhomogeneity of light intensity. We find that the...

  • Subnanosecond far infrared photoconductivity from a GaAs/AlGaAs multiquantum well. de Bekker, R. E. M.; Chamberlain, J. M.; Claessen, L. M.; Wyder, P.; Stanaway, M. B.; Grimes, R. T.; Henini, M.; Hughes, O. H.; Hill, G. // Journal of Applied Physics;8/15/1990, Vol. 68 Issue 4, p1913 

    Presents a study that investigated the far infrared photoconductivity of gallium arsenide (GaAs)/AlGaAs multiquantum wells (MQW) doped with silicon. Information on the binding energy of an electron to a hydrogen like impurity in an MQW; Details of the continuous wave magnetospectroscopy...

  • Electron mobilities and photoelectron lifetimes in AlGaAs/GaAs and InGaAs/GaAs quantum-well infrared detectors. Kane, M. J.; Millidge, S.; Emeny, M. T.; Guy, D. R. P.; Lee, D.; Whitehouse, C. R. // Journal of Applied Physics;6/1/1993, Vol. 73 Issue 11, p7966 

    Presents a study which reported gain and geometric magneto resistance electron mobility measurements for quantum-well infrared photo conductors gallium arsenide (GaAs), Al[subx]Ga[1-x]As and In[subx]Ga[1-x]As/GaAs. Role of intersubband transitions in wide-band-gap quantum wells in providing the...

  • Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/GaAs/AlGaAs step quantum wells. Yu, Jinling; Cheng, Shuying; Lai, Yunfeng; Zheng, Qiao; Chen, Yonghai // Nanoscale Research Letters;Dec2014, Vol. 9 Issue 1, p1 

    Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect (CPGE) at inter-band excitation have been experimentally investigated in InGaAs/GaAs/AlGaAs step quantum wells (QWs) at room temperature. The Rashba- and Dresselhaus-induced CPGE spectra are quite...

  • GaAs/AlGaAs quantum-well photodetector for visible and middle infrared dual-band detection. Liu, H. C.; Liu, H.C.; Song, C. Y.; Song, C.Y.; Shen, A.; Gao, M.; Wasilewski, Z. R.; Wasilewski, Z.R.; Buchanan, M. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    We present experimental results on quantum-well photodetectors for visible and infrared dual-band detection. Large band gap top contacts were used on a standard GaAs/AlGaAs quantum-well infrared photodetector so that visible light could reach the quantum-well region and be absorbed via interband...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics