TITLE

Reduced photoinduced degradation in chemical vapor deposited hydrogenated amorphous silicon films

AUTHOR(S)
Chu, T. L.; Chu, Shirley S.; Bylander, E. G.; Ang, S. T.
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p807
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hydrogenated amorphous silicon (a-Si:H) films prepared by the thermal decomposition of disilane in a He atmosphere [chemical vapor deposition (CVD)] contain 3–4% hydrogen, considerably less than the hydrogen content in a-Si:H films prepared by glow discharge (GD). The CVD a-Si:H films have been irradiated for up to 175 h at 500 and 600 mW/cm2 using a quartz-halogen lamp. The defect density in CVD a-Si:H films is estimated to approach saturation at mid 1016 cm-3 from an initial defect density of less than 6×1015 cm-3, whereas the typical defect density at saturation is greater than 1018 cm-3 for GD a-Si:H films. The significantly reduced Staebler–Wronski effect in CVD a-Si:H films is attributed to the lower concentration of clustered hydrogen atoms or silicon–hydrogen bonds.
ACCESSION #
9826178

 

Related Articles

  • Chemical vapor deposition of hydrogenated amorphous silicon. Kurtz, Sarah R.; Proscia, James; Gordon, Roy G. // Journal of Applied Physics;1/1/1986, Vol. 59 Issue 1, p249 

    Presents a study which examined chemical vapor deposition of hydrogenated amorphous silicon. Experimental methods; Mass spectrometric analysis for silanes; Examination of film growth rates and hydrogen content.

  • Molybdenum contamination in low-temperature epitaxial silicon films grown by remote plasma chemical vapor deposition. Sharma, R.; Fretwell, J.; Doris, B.; Banerjee, S. // Applied Physics Letters;7/1/1996, Vol. 69 Issue 1, p109 

    Molybdenum is a material commonly used in ultrahigh vacuum silicon processing systems. This letter shows that even at temperatures as low as 500 °C, the presence of Mo in contact with silicon during processing can, under certain circumstances, lead to Mo contamination of the silicon. MOS...

  • Visible photo- and electroluminescence from electrochemically formed nanocrystalline Si thin film. Toyama, Toshihiko; Matsui, Tetsuyuki; Kurokawa, Yasuhito; Okamoto, Hiroaki; Hamakawa, Yoshihiro // Applied Physics Letters;8/26/1996, Vol. 69 Issue 9, p1261 

    Visible photo- (PL) and electroluminescence (EL) were observed at room temperature from nanocrystalline Si (nc-Si) thin film; nc-Si was electrochemically formed in HF aqueous solution from boron doped microcrystalline Si (μc-Si) deposited by a rf plasma chemical vapor deposition method on a...

  • Kinetics of surface reactions in very low-pressure chemical vapor deposition of Si from SiH[sub 4]. Gates, S.M.; Kulkarni, S.K. // Applied Physics Letters;6/24/1991, Vol. 58 Issue 25, p2963 

    Presents a steady state kinetic model for the chemical vapor deposition growth of silicon film from SiH[sub 4] on Si(100). Model predictions of surface hydrogen coverage and Si film growth rate; Comparison with literature values for these qualities.

  • Composition change of SiC[sub x] (X=1-2) films due to variation of film precursors in the.... Lu-Sheng Hong; Shimogaki, Yukihiro // Applied Physics Letters;8/24/1992, Vol. 61 Issue 8, p910 

    Investigates the composition change of silicon carbide films due to variation of film precursors in the Si[sub 2]H[sub 6]/C[sub 2]C[sub 2] chemical vapor deposition (CVD) reaction system. Preparation of the films; Advantages of using the CVD; Mechanism governing the film composition.

  • Growth of undoped polycrystalline Si by an ultrahigh vacuum chemical vapor deposition system. Horng-Chih Lin; Hsiao-Yi Lin // Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1351 

    Investigates the deposition of undoped polycrystalline-silicon films using an ultrahigh vacuum chemical vapor deposition system. Activation energy of layer growth process; Desorption rate of surface-bonded hydrogen atoms; Observation of the incubation time.

  • Chemical vapor deposition of rough-morphology silicon films over a broad temperature range. Dana, S.S.; Anderle, M. // Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1387 

    Examines the growth of rough polycrystalline silicon films over a broad temperature range using chemical vapor deposition. Combination of nucleation-controlled initial growth; Domination of growth by surface reaction; Fabrication of rough polysilicon films employing reactive ion etching.

  • Polycrystalline silicon thin film transistors deposited at low substrate temperature by remote.... Jae Ik Woo; Hong Joo Lim // Applied Physics Letters;9/26/1994, Vol. 65 Issue 13, p1644 

    Examines the deposition of polycrystalline silicon thin film transistors on glass by remote plasma chemical vapor deposition. Indication of crystalline fraction in the substrate-deposited films; Exhibition of field effect mobility by the film transistors; Influence of substrate temperature on...

  • Growth of microcrystal silicon by remote plasma chemical vapor deposition. Sung Chul Kim; Moon Hyun Jung; Jin Jang // Applied Physics Letters;1/21/1991, Vol. 58 Issue 3, p281 

    Studies the growth of microcrystal silicon films by remote plasma chemical vapor deposition as growth parameters of substrate temperature and radio frequency (rf) power. X-ray diffraction patterns; Dependence of rf power on deposition rate; Dependence of rf power on etch rate; Dependence of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics