TITLE

Reduced photoinduced degradation in chemical vapor deposited hydrogenated amorphous silicon films

AUTHOR(S)
Chu, T. L.; Chu, Shirley S.; Bylander, E. G.; Ang, S. T.
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p807
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hydrogenated amorphous silicon (a-Si:H) films prepared by the thermal decomposition of disilane in a He atmosphere [chemical vapor deposition (CVD)] contain 3–4% hydrogen, considerably less than the hydrogen content in a-Si:H films prepared by glow discharge (GD). The CVD a-Si:H films have been irradiated for up to 175 h at 500 and 600 mW/cm2 using a quartz-halogen lamp. The defect density in CVD a-Si:H films is estimated to approach saturation at mid 1016 cm-3 from an initial defect density of less than 6×1015 cm-3, whereas the typical defect density at saturation is greater than 1018 cm-3 for GD a-Si:H films. The significantly reduced Staebler–Wronski effect in CVD a-Si:H films is attributed to the lower concentration of clustered hydrogen atoms or silicon–hydrogen bonds.
ACCESSION #
9826178

 

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