TITLE

GaAs-Si heterojunction bipolar transistor

AUTHOR(S)
Chen, J.; Won, T.; Ünlü, M. S.; Morkoç, H.; Verret, D.
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p822
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A GaAs/Si heterojunction bipolar transistor (HBT) structure is proposed having application for high-frequency operation. The structure combines the high-frequency capability of the GaAs/AlGaAs system with the advanced processing technology of Si. The proposed device consists of an n-AlGaAs/p-GaAs emitter and base layers on an n-Si collector with improved junction characteristics at the GaAs/Si heterointerface afforded by thermal annealing. This novel device structure combines the advantages associated with a wide band-gap AlGaAs emitter, the high electron mobility of GaAs, and the substantial reduction in device parasitics accorded the self-aligned structure. Additionally, the proposed device offers the possibility of planar GaAs processing. With the use of a compact transistor model, calculations of the high-speed capability of this transistor are presented. For an emitter-base junction area of 1 μm×5 μm, optimized fmax=108 GHz and fmax=ft=89 GHz were computed for the GaAs/Si HBT, compared to 76 and 62 GHz, respectively, for equivalent GaAs/AlGaAs HBT’s.
ACCESSION #
9826169

 

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