TITLE

Buried heterostructure AlxGa1-xAs-GaAs quantum well lasers by Ge diffusion from the vapor

AUTHOR(S)
Deppe, D. G.; Plano, W. E.; Dallesasse, J. M.; Hall, D. C.; Guido, L. J.; Holonyak, N.
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p825
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Data are presented on a method to diffuse Ge into quantum well AlxGa1-xAs-GaAs crystals from a vapor source, thus effecting impurity-induced layer disordering, and shift from lower to higher gap. The Ge diffusion is characterized on undoped GaAs by using secondary ion mass spectroscopy and capacitance-voltage electrochemical profiling. The layer disordering with Ge is used to fabricate 5-μm-wide buried heterostructure quantum well lasers (250 μm long) with continuous wave thresholds as low as 7 mA and output powers of greater than 90 mW (both facets).
ACCESSION #
9826167

 

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