TITLE

Erratum: Relaxation of strained-layer semiconductor structures via plastic flow [Appl. Phys. Lett. 51, 1325 (1987)]

AUTHOR(S)
Dodson, Brian W.; Tsao, Jeffrey. Y.
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p852
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a corrected reprint of an article focusing on the relaxation of strained-layer semiconductor structures through plastic flow. Time-dependence of mismatch strain relaxation in metastable strained overlayers; Dislocation mobility and multiplication; Poissons ratio.
ACCESSION #
9826148

 

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