Erratum: Relaxation of strained-layer semiconductor structures via plastic flow [Appl. Phys. Lett. 51, 1325 (1987)]

Dodson, Brian W.; Tsao, Jeffrey. Y.
March 1988
Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p852
Academic Journal
Presents a corrected reprint of an article focusing on the relaxation of strained-layer semiconductor structures through plastic flow. Time-dependence of mismatch strain relaxation in metastable strained overlayers; Dislocation mobility and multiplication; Poissons ratio.


Related Articles

  • A State with Bulk Stresses Arising in an Ideally Plastic Layer under Compression by Rough Plates. Mikhaılova, M. V. // Doklady Physics;Dec2000, Vol. 45 Issue 12, p676 

    Analyzes the stressed state of a bulk layer made of an ideally plastic material compressed by curved and inclined rough plates under conditions of perfect plasticity. Equilibrium equations; Deviation from linearity for compression stress; Shear yield point.

  • Inclined pileup of edge dislocations near the crack tip. Dhondt, Guido D. C.; Eringen, A. Cemal // Journal of Applied Physics;10/15/1989, Vol. 66 Issue 8, p3535 

    Observes the formation of a plastic zone, in the form of a linear array of inclined edge dislocations in front of a mode-I crack in plane strain. Information on the plane strain solution; Method of approach of the study; Results of the study.

  • Photoinduced and thermal stress in silicon microcantilevers. Datskos, Panos G.; Rajic, Slobodan; Datskou, Irene // Applied Physics Letters;10/19/1998, Vol. 73 Issue 16 

    The photogeneration of free charge carriers in a semiconductor gives rise to mechanical strain. We measured the deflection of silicon microcantilevers resulting from photoinduced stress. The excess charge carriers responsible for the photoinduced stress, were produced via photon irradiation from...

  • Valence energy-band structure for strained group-IV semiconductors. Manku, T.; Nathan, A. // Journal of Applied Physics;2/1/1993, Vol. 73 Issue 3, p1205 

    Provides information on a study which investigated a generic expression for the valence-band structure of strained group-IV semiconductors. Importance of strain in the design of semiconductor devices; Analysis for band structure; Conclusion.

  • Prediction of fold eccentricity in the axial axisymmetric plastic progressive collapse of circular tubes. Avalle, M; Belingardi, G // Journal of Strain Analysis for Engineering Design (Professional ;2002, Vol. 37 Issue 1, p1 

    In this paper an improved version of the fixed plastic hinge model of the axisymmetric axial crush of circular tubes is presented. The variation in the wall thickness that occurs during the fold development is properly taken into account. The resulting model of the kinematics of the fold...

  • On Characteristic Relations for Stresses and Displacement Velocities: A Case of the Spatial Problem for a Perfectly Plastic Body Satisfying the Condition of Full Plasticity. Ivlev, D. D.; Ishlinskiı, A. Yu.; Nepershin, R. I. // Doklady Physics;Dec2001, Vol. 46 Issue 12, p890 

    Analyzes the characteristic relations for stresses and displacement velocities in plasticity. Hyperbolic equations inherent in spatial problem of perfect-plasticity theory; Incompressibility and isotropy; Geiringer equations.

  • A model for dislocation sources in a shock or impact environment. Coffey, C. S. // Journal of Applied Physics;10/1/1987, Vol. 62 Issue 7, p2727 

    Presents a study that examined the operation of a dislocation source in a crystalline solid undergoing shock or impact loading. Information on macroscopic strain; Investigation of shear band formation; Analysis of the dual elastic-plastic shock wave structure; Assessment of the threshold...

  • Inhomogeneous strains in semiconducting nanostructures. Gippius, N. A.; Tikhodeev, S. G. // Journal of Experimental & Theoretical Physics;May99, Vol. 88 Issue 5, p1045 

    We have developed a numerical technique for calculating inhomogeneous strains in stressed semiconducting nanostructures, such as quantum wires and dots manufactured by nanolithography from stressed InGaAs/GaAs quantum wells. The technique is based on solving a linear problem of elasticity theory...

  • Monolithic two-dimensional surface-emitting strained-layer InGaAs/AlGaAs and AlInGaAs/AlGaAs.... Goodhue, W.D.; Donnelly, J.P.; Wang, C.A.; Lincoln, G.A.; Rauschenbach, K.; Bailey, R.J.; Johnson, G.D. // Applied Physics Letters;8/5/1991, Vol. 59 Issue 6, p632 

    Reports the monolithic two-dimensional arrays of folded-cavity surface- emitting strained-layer GaAs compound diode lasers. Fabrication of monolithic arrays; Specification of the individual lasers of the arrays; Presentation of array emitting with low threshold current densities.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics