Low-temperature oxidation of implanted TiSi2 films

Holland, O. W.
March 1988
Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p789
Academic Journal
The effect of implantation on the low-temperature oxidation behavior of TiSi2 films is investigated. Critical fluences of implanted impurities, such as As and Ga, are shown to alter the dominant oxidation mechanism in the films and greatly enhance oxidation. Different techniques, such as inert- and self-ion implantation, and implantation at elevated temperatures, were done so that ion-induced damage and chemical effects could be separately studied. These results, along with the dose dependency of the film’s behavior, will be presented. A model is proposed which accounts for these observations.


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