Room-temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2 on Si (111)

Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.; d’Anterroches, C.
March 1988
Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p804
Academic Journal
A solid phase epitaxy technique has been developed for the growth of CoSi2 films on Si (111) with no observable pinholes (103 cm-2 detection limit). The technique utilizes room-temperature codeposition of Co and Si in stoichiometric ratio, followed by the deposition of an amorphous Si capping layer and subsequent in situ annealing at 550–600 °C. CoSi2 films grown without the Si cap are found to have pinhole densities of 107–108 cm-2 when annealed at similar temperatures. A CF4 plasma etching technique was used to increase the visibility of the pinholes in the silicide layer. This plasma technique extends the pinhole detection resolution to 103 cm-2 and is independent of the pinhole size.


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