TITLE

High quality silicon-on-insulator structure formed by oxygen implantation and lamp annealing

AUTHOR(S)
Vu, D. P.; Haond, M.; d’Anterroches, C.; Oberlin, J. C.; Golanski, A.; Grob, J. J.; Maillet, S.
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p819
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A silicon-on-insulator (SOI) structure was formed by implanting 150 keV O+ ions into a single-crystal n-type Si. The substrate temperature during implantation was maintained at 600 °C. Implanted samples were subsequently annealed in the ambient air at 1350 °C for 70 min using a halogen lamp oven and analyzed using the Rutherford backscattering/channeling technique, cross-sectional electron microscopy, and high-resolution electron microscopy. It is shown that the resulting dislocation density within the top Si layer (105–106/cm2) is two to three orders of magnitude lower than the dislocation density previously reported for the SOI structures implanted under similar conditions and subsequently annealed in an inert gas ambient or under vacuum.
ACCESSION #
9826135

 

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