Fabrication of free-standing single-crystal silicon wires

Potts, A.; Hasko, D. G.; Cleaver, J. R. A.; Ahmed, H.
March 1988
Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p834
Academic Journal
A fabrication process for free-standing single-crystal silicon wires of submicrometer cross-sectional dimensions and lengths in excess of 40 μm is reported. The starting material is silicon-on-insulator that has been recrystallized using a dual electron beam recrystallizing system. The wires are then fabrictaed in the recrystallized layer by a combination of electron beam lithography and plasma etching. Electrical measurements have been performed and the fabrication limits of the process are discussed.


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