TITLE

Fabrication of free-standing single-crystal silicon wires

AUTHOR(S)
Potts, A.; Hasko, D. G.; Cleaver, J. R. A.; Ahmed, H.
PUB. DATE
March 1988
SOURCE
Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p834
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A fabrication process for free-standing single-crystal silicon wires of submicrometer cross-sectional dimensions and lengths in excess of 40 μm is reported. The starting material is silicon-on-insulator that has been recrystallized using a dual electron beam recrystallizing system. The wires are then fabrictaed in the recrystallized layer by a combination of electron beam lithography and plasma etching. Electrical measurements have been performed and the fabrication limits of the process are discussed.
ACCESSION #
9826133

 

Related Articles

  • The role of reflectivity change in optically induced recrystallization of thin silicon films. Grigoropoulos, Costas P.; Buckholz, Richard H.; Domoto, Gerald A. // Journal of Applied Physics;1/15/1986, Vol. 59 Issue 2, p454 

    Investigates a model of the fundamental mechanisms governing the radiatively induced recrystallization of a thin polysilicon layer on a heat-sink structure. Occurrence of instabilities in laser induced crystal growth on thin polysilicon layers; Method used for studying solidification...

  • Nanocrystalline-silicon superlattice produced by controlled recrystallization. Tsybeskov, L.; Hirschman, K. D.; Duttagupta, S. P.; Zacharias, M.; Fauchet, P. M.; McCaffrey, J. P.; Lockwood, D. J. // Applied Physics Letters;1/5/1998, Vol. 72 Issue 1 

    Nanocrystalline-silicon superlattices are produced by controlled recrystallization of amorphous-Si/SiO[sub 2] multilayers. The recrystallization is performed by a two-step procedure: rapid thermal annealing at 600–1000 °C, and furnace annealing at 1050 °C. Transmission electron...

  • Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates. Saenger, K. L.; de Souza, J. P.; Fogel, K. E.; Ott, J. A.; Reznicek, A.; Sung, C. Y.; Sadana, D. K.; Yin, H. // Applied Physics Letters;11/28/2005, Vol. 87 Issue 22, p221911 

    We demonstrate that the crystal orientation of single-crystal silicon layers may be changed in selected areas from one orientation to another by an amorphization/templated recrystallization (ATR) process, and then introduce ATR as an alternative approach for fabricating planar hybrid orientation...

  • Absence of electrical activity at high-angle grain boundaries in zone-melt-recrystallized.... Evans, P.V.; Smith, D.A. // Applied Physics Letters;1/27/1992, Vol. 60 Issue 4, p439 

    Examines the use of zone-melt-recrystallization of silicon-on-insulator films for electrical characterization of tilt grain boundaries. Absence of defect gap states after high-temperature annealing; Implication of electron channeling patterns for the misorientation of grain boundaries;...

  • Cellular and dendritic morphologies on stationary and moving liquid-solid interfaces in zone-melting recrystallization. Im, J. S.; Tomita, H.; Thompson, C. V. // Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p685 

    It is well known that when Si films are radiatively heated there exists a range of incident intensities for which liquid and solid regions coexist at near uniform temperature. Based on in situ microscopic observation of solidification interface morphologies, we argue that this phenomenon is...

  • A semiempirical model for the laser-induced molten zone in the laser recrystallization process. Willems, G. J.; Poortmans, J. J.; Maes, H. E. // Journal of Applied Physics;10/15/1987, Vol. 62 Issue 8, p3408 

    Focuses on a semiempirical model which describes the amount of silicon (Si) that is molten in laser recrystallization of polycrystalline Si layers. Influence of laser power, scan velocity, preheating temperature and capping layer structure; Problem regarding the computation of the temperature...

  • Recrystallization of MeV Si implanted 6H-SiC. Harada, Shinsuke; Ishimaru, Manabu; Motooka, Teruaki; Nakata, Toshitake; Yoneda, Tomoaki; Inoue, Morio // Applied Physics Letters;12/2/1996, Vol. 69 Issue 23, p3534 

    Microstructures of recrystallized layers in 8 MeV Si3+ ion implanted 6-H-SiC (0001) wafers have been characterized by means of transmission electron microscopy. Epitaxial recrystallization of buried amorphous layers was observed at annealing temperature as low as 1000 °C. Layer-by-layer...

  • A study of trench-edge defect formation in (001) and (011) silicon recrystallized by solid phase epitaxy. Saenger, K. L.; de Souza, J. P.; Fogel, K. E.; Ott, J. A.; Sung, C. Y.; Sadana, D. K.; Yin, H. // Journal of Applied Physics;1/15/2007, Vol. 101 Issue 2, p024908 

    Trench-edge defects formed during epitaxial recrystallization of trench-bounded amorphized silicon (a-Si) regions are examined as a function of Si substrate crystal orientation. In Si (001), rectilinear a-Si features having edges aligned with the crystal’s in-plane <110> directions...

  • A heat transfer algorithm for the laser-induced melting and recrystallization of thin silicon layers. Grigoropoulos, Costas P.; Buckholz, Richard H.; Domoto, Gerald A. // Journal of Applied Physics;10/1/1986, Vol. 60 Issue 7, p2304 

    Presents information on a study which described some numerical calculations for the temperature fields associated with laser melting and subsequent recrystallization of a thin silicon film on a conductive glass substrate. Sketch of the silicon layer and the substrate structure; Calculations...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics