Ion-induced epitaxial growth of chemical vapor deposited Si layers

La Ferla, A.; Rimini, E.; Ferla, G.
February 1988
Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p712
Academic Journal
Thin layers of Si were chemical vapor deposited onto as-received <100> p-type Si wafers. The samples were subsequently implanted with 1×1015/cm2, 80 keV As. The native oxide film impedes the growth even at 800 °C, 1 h; instead irradiation with 600 keV Kr++ at 450 °C causes the epitaxial growth of the entire deposited and amorphized Si layer. The sheet resistance of these As-doped layers (130 Ω/[Laplacian_variant]) coincides with that of samples in which the amorphous layer was obtained by As ion implantation only. The value is at least ten times lower than that of the polycrystalline layer doped with the same amount of As.


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