TITLE

Ion-induced epitaxial growth of chemical vapor deposited Si layers

AUTHOR(S)
La Ferla, A.; Rimini, E.; Ferla, G.
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p712
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin layers of Si were chemical vapor deposited onto as-received <100> p-type Si wafers. The samples were subsequently implanted with 1×1015/cm2, 80 keV As. The native oxide film impedes the growth even at 800 °C, 1 h; instead irradiation with 600 keV Kr++ at 450 °C causes the epitaxial growth of the entire deposited and amorphized Si layer. The sheet resistance of these As-doped layers (130 Ω/[Laplacian_variant]) coincides with that of samples in which the amorphous layer was obtained by As ion implantation only. The value is at least ten times lower than that of the polycrystalline layer doped with the same amount of As.
ACCESSION #
9826114

 

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