TITLE

Raman scattering in (AlxGa1-x)0.51In0.49P quaternary alloys

AUTHOR(S)
Kubo, Minoru; Mannoh, Masaya; Takahashi, Yasuhito; Ogura, Mototsugu
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p715
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a Raman study of the phonon mode of (AlxGa1-x)0.51In0.49P quaternary alloys lattice matched to GaAs over the whole range of compositions. From the composition dependence of spectra it has been confirmed that the three-mode behavior of the alloy corresponding to the three binary compositions: AlP-, GaP-, and InP-like phonon modes may occur.
ACCESSION #
9826111

 

Related Articles

  • Raman scattering from AlGaInP. Kondow, Masahiko; Minagawa, Shigekazu; Satoh, Shin // Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p2001 

    Raman scattering spectra from AlGaInP quaternary alloys grown on GaAs substrates are measured. Dominant peaks observed are identified as AlP-, GaP-, and InP-like longitudinal optical modes. Mode frequency is seen to change almost linearly with aluminum composition, exhibiting the...

  • DLTFS Investigation of Ingaasn/Gaas Tandem Solar Cell. Kósa, Arád; Stuchlíková, L'ubica; Dawidowski, Wojciech; Jakuš, Juraj; Sciana, Beata; Radziewicz, Damian; Pucicki, Damian; Harmatha, Ladislav; Kováč, Jaroslav; Tłaczala, Marek // Journal of Electrical Engineering;Sep2014, Vol. 65 Issue 5, p271 

    In this paper authors present the results of identification of emission and capture processes in tandem solar cell structures based on quaternary InGaAsN semiconductor alloys by DLTFS (Deep Level Transient Fourier Spectroscopy) and by ana- lytical evaluation processes. The energies of five trap...

  • Raman spectra of Zn1-xMgxSySe1-y quaternary alloys. Wang, Donghong; Huang, Daming; Jin, Caixia; Liu, Xiaohan; Lin, Zheng; Wang, Jie; Wang, Xun // Journal of Applied Physics;7/15/1996, Vol. 80 Issue 2, p1248 

    Focuses on a study which grew semiconductor quaternary alloys Zn[sub1-x]Mg[subx]S[suby]Se[sub1-y] on gallium arsenide substrates by molecular beam epitaxy. Background on the alloy; Photoluminescent studies of the alloy; Information on light scattering.

  • GaAs1-y-zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs. Forghani, Kamran; Yingxin Guan; Losurdo, Maria; Luo, Guangfu; Morgan, Dane; Babcock, Susan E.; Brown, April S.; Mawst, Luke J.; Kuech, T. F. // Applied Physics Letters;9/15/2014, Vol. 105 Issue 11, p1 

    The growth and properties of alloys in the alternative quaternary alloy system GaAs1−y−zPyBiz were explored. This materials system allows simultaneous and independent tuning of lattice constant and band gap energy, Eg, over a wide range for potential near- and mid-infrared...

  • Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system. Mikhailova, M. P.; Moiseev, K. D.; Voronina, T. I.; Lagunova, T. S.; Yakovlev, Yu. P. // Semiconductors;Feb2007, Vol. 41 Issue 2, p161 

    Conditions for the transition from the staggered heterojunction to the type-II broken-gap one were considered for isolated Ga1− x InxAsySb1− y /InAs(GaSb) heterostructures in relation to the quaternary alloy composition. Energy-band diagrams of such heterojunctions were estimated and...

  • Novel self-assembled quantum dots in the GaSb/AlAs heterosystem. Shamirzaev, T.; Abramkin, D.; Gutakovskii, A.; Putyato, M. // JETP Letters;Jul2012, Vol. 95 Issue 10, p534 

    Novel self-assembled quantum dots (QDs) in the GaSb/AlAs heterosystem were obtained and studied by means of transmission electron microscopy, steady-state and transient photoluminescence. A strong inter-mixing of both III and V group materials results in the fabrication of quaternary alloy QDs...

  • Determination of band gap energy (Eg) of Cu2ZnSnSe4 thin films: On the discrepancies of reported band gap values. SeJin Ahn; Sunghun Jung; Jihye Gwak; Ara Cho; Keeshik Shin; Kyunghoon Yoon; Doyoung Park; Hyonsik Cheong; Jae Ho Yun // Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p021905 

    We demonstrate experimental data to elucidate the reason for the discrepancies of reported band gap energy (Eg) of Cu2ZnSnSe4 (CZTSe) thin films, i.e., 1.0 or 1.5 eV. Eg of the coevaporated CZTSe film synthesized at substrate temperature (Tsub) of 370 °C, which was apparently phase pure CZTSe...

  • Effect of substrate oxidation on improving the quality of hydroxyapatite coating on CoNiCrMo. Tao Wang; Dorner-Reisel, A. // Journal of Materials Science;Jul2004, Vol. 39 Issue 13, p4309 

    Presents a letter to the editor on the effect of substrate oxidation on improving the quality of hydroxyapatite coating on cobalt-nickel-chromium-molybdenum (CoNiCrMo) alloy.

  • Composition dependence of the energy gap of Zn[sub 1-x-y]Mg[sub x]Be[sub y]Se quaternary alloys nearly lattice matched to GaAs. Godo, K.; Makino, H.; Cho, M. W.; Chang, J. H.; Yamazaki, Y.; Yao, T.; Shen, M. Y.; Goto, T. // Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4168 

    The composition dependence of the energy gap (E[sub g]) of Zn[sub 1 − x − y] Mg[sub x]Be[sub y]Se quaternary alloys grown by molecular-beam epitaxy was investigated. The energy gap of Zn[sub 1 − x − y]Mg[sub x]Be[sub y]Se can be controlled in a range of 2.7 eV < E[sub g]...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics