TITLE

Equivalence between interface traps in SiO2/Si generated by radiation damage and hot-electron injection

AUTHOR(S)
Nishioka, Yasushiro; da Silva, Eronides F.; Ma, T. P.
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p720
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have made a comparison between the interface traps generated in the metal/SiO2/Si structure by x-ray ionizing radiation and Fowler–Nordheim hot-electron injection, and found very strong similarities between the two. More specifically, the qualitative features of the energy distribution of the interface traps, their post-damage time-dependence behavior, and their dependence on the gate bias while being damaged are all very much alike, supporting the notion that the same types of interfacial defects are generated by the two different processes.
ACCESSION #
9826110

 

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