TITLE

Plasma-controlled deposition of GaAs and GaAsP by metalorganic chemical vapor deposition

AUTHOR(S)
Huelsman, A. D.; Zien, L.; Reif, R.
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p726
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Alternating layers of GaAs and GaAsxP1-x with varying x were grown at low temperatures using a plasma-enhanced metalorganic chemical vapor deposition process. A remote plasma localized to a region above the substrate was used to selectively dissociate arsine and phosphine and allow GaAs and GaAsxP1-x to be grown at low temperatures where no appreciable deposition takes place without the plasma. This made it possible to use the plasma as a switch to turn deposition on and off. The technique was used to produce very abrupt multiple layers of GaAs and GaAsxP1-x by changing gases when the plasma was off.
ACCESSION #
9826106

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics