TITLE

Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties

AUTHOR(S)
Ng, G. I.; Pavlidis, D.; Quillec, M.; Chan, Y. J.; Jaffe, M. D.; Singh, J.
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p728
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A study of the properties of In0.52Al0.48As/In0.53+xGa0.47-xAs high electron mobility transistors is carried out for 0%, 7%, and 12% excess In values in the channel. Theoretical analysis shows that the enhanced In causes a biaxial compressive strain of 0.49% to 0.84% in the channel, increases the band-edge discontinuity from 0.437 to 0.500 eV, and reduces the carrier mass by 6%. Experimental characterizations support the theoretical predictions by demonstrating an increase of mobility from 9900 to 11 200 cm2/V s at 300 K, and a transconductance enhancement from 160 to at least 230 mS/mm.
ACCESSION #
9826104

 

Related Articles

  • 2.1 A/mm current density AIGaN/GaN HEMT. Chini, A.; Coffie, R.; Meneghesso, G.; Zanoni, E.; Buttari, D.; Heikman, S.; Keller, S.; Mishra, U.K. // Electronics Letters;4/3/2003, Vol. 39 Issue 7, p625 

    Discusses the electrical performance of a high current AlGaN/GaN high electron mobility transistors. Current densities; Radio frequency measurements; Application in microwave power, communication systems and radar.

  • AIGaN/GaN HEMTs on Si(111) with 6.6 W/mm output power density. Behtash, R.; Tobler, H.; Neuburger, M.; Schurr, A.; Leier, H.; Cordier, Y.; Semond, F.; Natali, F.; Massies, J. // Electronics Letters;4/3/2003, Vol. 39 Issue 7, p626 

    Discusses the power performance of AlGaN/GaN high electron mobility transistors grown on resistive silicon substrates. Output power density; Power added efficiency; Growth and layer quality of AlGaN/GaN heterostructure.

  • Spectrum of hot-electron luminescence from high electron mobility transistors. Zappe, Hans P.; As, D.J. // Applied Physics Letters;10/28/1991, Vol. 59 Issue 18, p2257 

    Analyzes the spectrum of hot-electron luminescence from high electron mobility transistors (HEMT). Implication of distinct recombination peaks for carrier distribution; Significance of real space transfer in HEMT; Fabrication of HEMT by molecular beam epitaxy with standard superlattice and...

  • Highly anisotropic electron mobilities of GaAs/In[sub 0.2]Ga[sub 0.8]As/Al[sub 0.3]Ga[sub 0.7]As.... Schweizer, T.; Kohler, K.; Rothemund, W.; Ganser, P. // Applied Physics Letters;11/18/1991, Vol. 59 Issue 21, p2736 

    Demonstrates the anisotropic electron mobilities of inverted high electron mobility transistor structures. Application of the Hall effect measurement; Relation between quantum well thickness and electron mobility; Observation of anisotropy at lower temperatures.

  • Negative photoconductivity in high electron mobility transistors. Chang, C. S.; Fetterman, H. R.; Ni, D.; Sovero, E.; Mathur, B.; Ho, W. J. // Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2233 

    High electron mobility transistors are sensitive to light since illumination ionizes deep donor centers and increases the drain current. In this letter the first observation of negative photoconductivity, i.e., drain current decreasing with light, will be reported. The current-voltage...

  • Contact boundary conditions and the Dyakonov-Shur instability in high electron mobility... Crowne, Frank J. // Journal of Applied Physics;8/1/1997, Vol. 82 Issue 3, p1242 

    Discusses various aspects of a proposed novel device structure developed by physicists M. Dyakonov and M. Shur focusing on the instability of high electron mobility transistors. Experimental procedures; Features of the Dyakonov-Shur model; Effect of viscosity on model; Resonator problem...

  • Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopy. Chauveau, J.-M.; Androussi, Y.; Lefebvre, A.; Di Persio, J.; Cordier, Y. // Journal of Applied Physics;4/1/2003, Vol. 93 Issue 7, p4219 

    We propose a method to determine the indium concentrations x and y in the In[sub y]Al[sub 1-y]As/In[sub x]Ga[sub 1-x]As metamorphic structures. This approach is based on the combination of two experimental techniques: (i) reciprocal space mapping (RSM) to determine the average In composition in...

  • Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence. Parsons, C. A.; Kim, M. H.; Quinn, W. E.; Herrmann, H. B.; Swirhun, S. E.; Brierley, S. K. // Journal of Applied Physics;7/15/1994, Vol. 76 Issue 2, p1343 

    Discusses the nondestructive room temperature photoluminescence (PL) of the InGaAs channel of a pseudomorphic high electron mobility transistor as a function of bias applied to a semitransparent gate. Equation for the low-field conductivity mobility; Results of electrical and PL measurements.

  • Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP. Sylvestre, A.; Aniel, F. // Journal of Applied Physics;7/1/1996, Vol. 80 Issue 1, p464 

    Studies the low-energy electroluminescence (EL) at low temperature of short gate high-electron-mobility transistors (HEMTs) on InP. Photoluminescence (PL) spectra of the sample; Electroluminescence in HEMTs with a conducting channel; Localization of impact ionization; Influence of electric...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics